Graphene-based field effect transistor integration using gm/ID design methodology

The fast-paced adaptation and innovation of technology has necessitated the exploration of new materials that could pick up where Silicon technology could not continue due to material property limitations. While technology starts to convert from silicon-based to two-dimensional graphene-based devices, major changes must be made to create the next-generation technology. This change also introduces restrictions to the current outdated design methodology. This paper provides an extensive review on current physical designs of Graphene-based field effect transistors and discusses how these designs could affect the current gm/ID design methodology. Furthermore, it explores the implementation of this methodology using Python as the computational framework.

Name thesis:degree_name

M.S.

Level thesis:degree_level

Thesis

Discipline thesis:degree_discipline

Electrical & Computer Engr

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2024

Author dc:creator

• Su, Daniel

Contributors dc:contributor

• Hanumolu, Pavan K

• Graphene
• Gm/id
• Analog Design
• Cnt

Statement dc:rights

• Copyright 2024 Daniel Su

Language dc:language

en, eng

Handle dc:identifier

https://hdl.handle.net/2142/127298

OAI record oai:identifier

https://www.ideals.illinois.edu/oai-pmh?verb=GetRecord&metadataPrefix=etdms&identifier=oai%3Awww.ideals.illinois.edu%3A2142%2F127298