{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/127298"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/127298","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Graphene-based field effect transistor integration using gm/ID design methodology","abstract":"This Thesis was approved for publication on 2024-12-12 at 16:28.","abstract_html":"This Thesis was approved for publication on 2024-12-12 at 16:28.","abstract_has_math":false,"creators":["Su, Daniel"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"M.S.","degree_level":"Thesis","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Hanumolu, Pavan K"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2024,"date_issued":"2024-12-12","date_published":"2024-12-12","updated_at":"2026-07-22T22:25:03Z","subjects":["Graphene","Gm/id","Analog Design","Cnt"],"languages":["en","eng"],"rights":["Copyright 2024 Daniel Su"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"https://hdl.handle.net/2142/127298","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Hanumolu, Pavan K"]},{"key":"dc:creator","label":"Author","values":["Su, Daniel"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2024-12-12","2024-12"]},{"key":"dc:type","label":"Dc Type","values":["text","Thesis"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Thesis"]},{"key":"thesis:degree_name","label":"Degree Name","values":["M.S."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Graphene","Gm/id","Analog Design","Cnt"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en","eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2024 Daniel Su"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["https://hdl.handle.net/2142/127298"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["This Thesis was approved for publication on 2024-12-12 at 16:28.","Submission original under an indefinite embargo labeled 'Open Access'. The submission was exported from vireo on 2025-03-28 without embargo terms","The student, Daniel Su, accepted the attached license on 2024-12-12 at 10:44.","The student, Daniel Su, submitted this Thesis for approval on 2024-12-12 at 10:48.","DSpace SAF Submission Ingestion Package generated from Vireo submission #21581 on 2025-03-28 at 14:28:50","The fast-paced adaptation and innovation of technology has necessitated the exploration of new materials that could pick up where Silicon technology could not continue due to material property limitations. While technology starts to convert from silicon-based to two-dimensional graphene-based devices, major changes must be made to create the next-generation technology. This change also introduces restrictions to the current outdated design methodology. This paper provides an extensive review on current physical designs of Graphene-based field effect transistors and discusses how these designs could affect the current gm/ID design methodology. Furthermore, it explores the implementation of this methodology using Python as the computational framework."]},{"key":"dc:format","label":"Dc Format","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Graphene-based field effect transistor integration using gm/ID design methodology"]}]}],"canonical_facts":{"dc:contributor":["Hanumolu, Pavan K"],"dc:creator":["Su, Daniel"],"dc:date":["2024-12-12","2024-12"],"dc:description":["This Thesis was approved for publication on 2024-12-12 at 16:28.","Submission original under an indefinite embargo labeled 'Open Access'. The submission was exported from vireo on 2025-03-28 without embargo terms","The student, Daniel Su, accepted the attached license on 2024-12-12 at 10:44.","The student, Daniel Su, submitted this Thesis for approval on 2024-12-12 at 10:48.","DSpace SAF Submission Ingestion Package generated from Vireo submission #21581 on 2025-03-28 at 14:28:50","The fast-paced adaptation and innovation of technology has necessitated the exploration of new materials that could pick up where Silicon technology could not continue due to material property limitations. While technology starts to convert from silicon-based to two-dimensional graphene-based devices, major changes must be made to create the next-generation technology. This change also introduces restrictions to the current outdated design methodology. This paper provides an extensive review on current physical designs of Graphene-based field effect transistors and discusses how these designs could affect the current gm/ID design methodology. Furthermore, it explores the implementation of this methodology using Python as the computational framework."],"dc:format":["application/pdf"],"dc:identifier":["https://hdl.handle.net/2142/127298"],"dc:language":["en","eng"],"dc:rights":["Copyright 2024 Daniel Su"],"dc:subject":["Graphene","Gm/id","Analog Design","Cnt"],"dc:title":["Graphene-based field effect transistor integration using gm/ID design methodology"],"dc:type":["text","Thesis"],"thesis:degree_discipline":["Electrical & Computer Engr"],"thesis:degree_level":["Thesis"],"thesis:degree_name":["M.S."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:03Z"}