Reactive Plasma Etching of Silicon Carbide, Silicon Carbonitride, and Titanium Nitride in a Tetrafluoroethane/Oxygen Plasma

In this study we investigate the etching of the diffusion barrier between the silicon substrate and the 1ow-k dielectric material. We will use silicon carbide (SiC), silicon carbonitride (SiCN), and titanium nitride (TiN) as our diffusion layer. Using the RF plasma and the magnetron gun with 1,1,1,2 tetrafluoroethane and oxygen as the active gases, we will obtain a reliable and reproducible method for determining the maximum etch rate for the various materials. An etch is required in order for a proper ground contact with the substrate. Si and A1 selectivity will also be discussed. The etch process along with the aluminum mask are prepared using standard photolithography techniques, and reactive ion etching (RIE) parameters (pressure and power) will be discussed. RIE is chemistry-specific process that enables the selective etching of sample elements. Etch profiles were taken using a profilometer.

Name thesis:degree_name

Master of Science

Level thesis:degree_level

Masters

Discipline thesis:degree_discipline

Physics

Grantor

Texas State University-San Marcos

Year dc:date.issued

2006

Author dc:creator

• McDonald, James Steven

Advisor dc:contributor.advisor

• Galloway, Heather

Committee members dc:contributor.committeemember

• Geerts, Wilhelmus Johannes Maria Arnoldus
• Michalk, Victor E.

• plasma etching
• diffusion
• silicon carbonitride
• titanium nitride
• tetrafluoroethane
• oxygen plasma

Language dc:language.iso

en

Handle dc:identifier.uri

https://hdl.handle.net/10877/12042

OAI identifier oai:identifier

oai:digital.library.txst.edu:10877/12042