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Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 83 for “"diffusion barrier"”.
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Rehardenable materials system with diffusion barrier for three-dimensional printing
… of metal powders and infiltrants by using a diffusion barrier to isolate them; and 2) to demonstrate the diffusion-barrier approach with steel and hardenable copper-alloy infiltrant. The model materials systems in this study consist of stainless steel and tool steel powder skeletons with …
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Adherence/Diffusion Barrier Layers for Copper Metallization: Amorphous Carbon:Silicon Polymerized Films
… and electrical stresses, requiring the use of barriers to inhibit diffusion, adding to the insulator thickness and delay time, or replacement of SiO2 with new insulator materials that can inhibit diffusion while enabling Cu wetting. This study proposes modified amorphous silicon carbon hydrogen …
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Remote Plasma Chemical Vapor Deposition of Zirconium Boride: Growth and Diffusion Barrier Characteristics
… film of ZrB2 on c-Si(001) prevents Cu indiffusion after 30 min at 750°C. We propose that the beneficial effects of atomic hydrogen can be attributed largely to promoting the desorption of diborane from the growth surface.
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Diffusion Barrier Coatings for Liquid Metal Corrosion Resistance in Next-Generation Nuclear Reactors
… interactions that occur between a ceramic diffusion barrier coating applied onto nuclear reactor cladding, liquid metal coolants, and metallic fuel used in Sodium-Cooled Fast Reactors (SFRs) and Lead-Cooled Fast Reactors (LFRs). In SFRs and LFRs, damage to cladding and structural materials …
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Adhesion/Diffusion Barrier Layers for Copper Integration: Carbon-Silicon Polymer Films and Tantalum Substrates
… of Cu with various substrates, including diffusion barriers and adhesion promoters, is essential to achieve this goal. The objective of this research is to develop novel organic polymers as Cu/low-k interfacial layers and to investigate popular barrier candidates, such as clean and …
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Study of Ruthenium and Ruthenium Oxide's Electrochemical Properties and Application as a Copper Diffusion Barrier
As a very promising material of copper diffusion barrier for next generation microelectronics, Ru has already obtained a considerable attention recently. In this dissertation, we investigated ruthenium and ruthenium oxide electrochemical properties and the application as a copper diffusion barrier. …
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Process Evaluation and Characterization of Tungsten Nitride as a Diffusion Barrier for Copper Interconnect Technology
… toward achieving this goal is the development of diffusion barriers that resolve the Cu and dielectric incompatibility. The focus of this research examines the potential use of tungsten nitride as a diffusion barrier by characterizing the interfacial properties with Cu and evaluating its process …
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Study of Interactions Between Diffusion Barrier Layers and Low-k Dielectric Materials for Copper/Low-k Integration
… interconnect scheme requires the development of diffusion barrier/adhesion promoter materials that provide excellent performance in preventing the diffusion and intermixing of Cu into the adjacent dielectrics. The integration of Cu with low-k materials may decrease RC delays in signal propagation …
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Chemically Enhanced Physical Vapor Deposition (Cepvd) of Tantalum Nitride-Based Films for Diffusion Barrier Layers Used in ULSI Devices
A zero-order semi-empirical model is established allowing the attachment of physical understanding and CEPVD experimental phenomena. The model stems from the knowledge of reactive sputtering and PECVD processes as well as the acquired CEPVD experiment results. It correlates the processing …
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Al/ti(x)w(1-X) Metal/diffusion-Barrier Systems: Interfacial Reaction Paths and Kinetics as a Function of Composition and Microstructure
… of WAl$\sb{12}$ formation. In Ti deficient TiW barriers ($<$0.06 at% Ti) sputter deposited in Ar, the WAl$\sb4$ layer is discontinuous and the activation energy for barrier failure is 2.7 eV. In TiW barriers sputtered in Xe (0.33 at% Ti), the diffusion of Ti to the surface creates a counterflux …
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Investigation of the actin-membrane interaction at the leading edge and its influence on membrane diffusion
… of protruding fish keratocytes functions as a diffusion^M barrier for lipid dyes.^M The aim of the here presented thesis was to continue this project and to study the actin-membrane interaction at the leading edge, using the diffusion barrier^M as an initial read-out method. First it was …
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Instrumentation For the Study of Tantalum Diffusion Barriers Between Silicon Substrates and Copper Films
… to readily diffuse into silicon; therefore, a diffusion barrier between silicon and copper is needed. Currently tantalum and tantalum nitride are two materials that have been successfully used as diffusion barriers, but a detailed study of the physical properties that affect their diffusion …
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Study of Copper Electrodeposition on Ruthenium Oxide Surfaces and Bimetallic Corrosion of Copper/Ruthenium in Gallic Acid Solution
Ruthenium, proposed as a new candidate of diffusion barrier, has three different kinds of oxides, which are native oxide, electrochemical reversible oxide and electrochemical irreversible oxide. Native oxide was formed by naturally exposed to air. Electrochemical reversible oxide was formed at …
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Growth and chemical characterisation studies of Mn silicate barrier layers on SiO2 and CDO
… (MnSiO3) as a possible copper interconnect diffusion barrier layer on both a 5.4 nm thick thermally grown SiO2 and a low dielectric constant carbon doped oxide (CDO), with the focus of understanding the barrier formation process. The self forming nature of this diffusion barrier layer …
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Diffusion Barriers/Adhesion Promoters. Surface and Interfacial Studies of Copper and Copper-Aluminum Alloys
… to study the interaction between copper and the diffusion barrier/adhesion promoter. The behavior of copper sputter-deposited onto sputter-cleaned tantalum nitride is investigated. The data show that copper growth on tantalum nitride proceeds with the formation of 3-D islands, indicating poor …
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Scanning Tunneling Microscopy Studies of Cluster Diffusion in a Highly Mismatched system:Copper on Silver(111)
… tunneling microscopy to investigate cluster diffusion phenomena in both the early stages of nucleation and growth and the late stages for a highly mismatched system, Cu on Ag(111). In particular, activation energies and prefactors for cluster diffusion are measured directly by tracking …
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Scanning Tunneling Microscopy Studies of Cluster Diffusion in a Highly Mismatched System: Copper on Silver(111)
… tunneling microscopy to investigate cluster diffusion phenomena in both the early stages of nucleation and growth and the late stages for a highly mismatched system, Cu on Ag(111). In particular, activation energies and prefactors for cluster diffusion are measured directly by tracking …
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Reactive Plasma Etching of Silicon Carbide, Silicon Carbonitride, and Titanium Nitride in a Tetrafluoroethane/Oxygen Plasma
In this study we investigate the etching of the diffusion barrier between the silicon substrate and the 1ow-k dielectric material. We will use silicon carbide (SiC), silicon carbonitride (SiCN), and titanium nitride (TiN) as our diffusion layer. Using the RF plasma and the magnetron gun with …
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