{"id":{"repo_id":"texas-state","oai_identifier":"oai:digital.library.txst.edu:10877/12042"},"canonical_url":"https://search.dev.ndltd.org/etd/texas-state/oai:digital.library.txst.edu:10877/12042","repository":{"repo_id":"texas-state","name":"Texas State University","base_url":"https://digital.library.txst.edu/server/oai/request"},"display":{"title":"Reactive Plasma Etching of Silicon Carbide, Silicon Carbonitride, and Titanium Nitride in a Tetrafluoroethane/Oxygen Plasma","abstract":"In this study we investigate the etching of the diffusion barrier between the silicon substrate and the 1ow-k dielectric material. We will use silicon carbide (SiC), silicon carbonitride (SiCN), and titanium nitride (TiN) as our diffusion layer. Using the RF plasma and the magnetron gun with 1,1,1,2 tetrafluoroethane and oxygen as the active gases, we will obtain a reliable and reproducible method for determining the maximum etch rate for the various materials. An etch is required in order for a proper ground contact with the substrate. Si and A1 selectivity will also be discussed. The etch process along with the aluminum mask are prepared using standard photolithography techniques, and reactive ion etching (RIE) parameters (pressure and power) will be discussed. RIE is chemistry-specific process that enables the selective etching of sample elements. Etch profiles were taken using a profilometer.","abstract_html":"In this study we investigate the etching of the diffusion barrier between the silicon substrate and the 1ow-k dielectric material. We will use silicon carbide (SiC), silicon carbonitride (SiCN), and titanium nitride (TiN) as our diffusion layer. Using the RF plasma and the magnetron gun with 1,1,1,2 tetrafluoroethane and oxygen as the active gases, we will obtain a reliable and reproducible method for determining the maximum etch rate for the various materials. An etch is required in order for a proper ground contact with the substrate. Si and A1 selectivity will also be discussed. The etch process along with the aluminum mask are prepared using standard photolithography techniques, and reactive ion etching (RIE) parameters (pressure and power) will be discussed. RIE is chemistry-specific process that enables the selective etching of sample elements. Etch profiles were taken using a profilometer.","abstract_has_math":false,"creators":["McDonald, James Steven"],"institution":"Texas State University-San Marcos","degree_name":"Master of Science","degree_level":"Masters","degree_discipline":"Physics","degree_department":null,"school":null,"contributors":[],"advisors":["Galloway, Heather"],"committee_chairs":[],"committee_members":["Geerts, Wilhelmus Johannes Maria Arnoldus","Michalk, Victor E."],"year":2006,"date_issued":"2006-05","date_published":"2006-05","updated_at":"2026-07-27T21:22:45Z","subjects":["plasma etching","diffusion","silicon carbonitride","titanium nitride","tetrafluoroethane","oxygen plasma"],"languages":["en"],"rights":[],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"https://hdl.handle.net/10877/12042","outbound_label":"Handle","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor.advisor","label":"Advisor","values":["Galloway, Heather"]},{"key":"dc:contributor.committeemember","label":"Committee Member","values":["Geerts, Wilhelmus Johannes Maria Arnoldus","Michalk, Victor E."]},{"key":"dc:creator","label":"Author","values":["McDonald, James Steven"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.accessioned","label":"Dc Date Accessioned","values":["2020-07-10T14:54:29Z"]},{"key":"dc:date.available","label":"Dc Date Available","values":["2020-07-10T14:54:29Z"]},{"key":"dc:date.issued","label":"Date","values":["2006-05"]},{"key":"dc:type","label":"Dc Type","values":["Thesis"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Physics"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Masters"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Master of Science"]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["Texas State University-San Marcos"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["plasma etching","diffusion","silicon carbonitride","titanium nitride","tetrafluoroethane","oxygen plasma"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language.iso","label":"Language (ISO)","values":["en"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.uri","label":"Identifier URI","values":["https://hdl.handle.net/10877/12042"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["In this study we investigate the etching of the diffusion barrier between the silicon substrate and the 1ow-k dielectric material. We will use silicon carbide (SiC), silicon carbonitride (SiCN), and titanium nitride (TiN) as our diffusion layer. Using the RF plasma and the magnetron gun with 1,1,1,2 tetrafluoroethane and oxygen as the active gases, we will obtain a reliable and reproducible method for determining the maximum etch rate for the various materials. An etch is required in order for a proper ground contact with the substrate. Si and A1 selectivity will also be discussed. The etch process along with the aluminum mask are prepared using standard photolithography techniques, and reactive ion etching (RIE) parameters (pressure and power) will be discussed. RIE is chemistry-specific process that enables the selective etching of sample elements. Etch profiles were taken using a profilometer."]},{"key":"dc:format","label":"Dc Format","values":["Text"]},{"key":"dc:format.medium","label":"Dc Format Medium","values":["1 file (.pdf)"]},{"key":"dc:title","label":"Title","values":["Reactive Plasma Etching of Silicon Carbide, Silicon Carbonitride, and Titanium Nitride in a Tetrafluoroethane/Oxygen Plasma"]}]}],"canonical_facts":{"dc:contributor.advisor":["Galloway, Heather"],"dc:contributor.committeemember":["Geerts, Wilhelmus Johannes Maria Arnoldus","Michalk, Victor E."],"dc:creator":["McDonald, James Steven"],"dc:date.accessioned":["2020-07-10T14:54:29Z"],"dc:date.available":["2020-07-10T14:54:29Z"],"dc:date.issued":["2006-05"],"dc:description.abstract":["In this study we investigate the etching of the diffusion barrier between the silicon substrate and the 1ow-k dielectric material. We will use silicon carbide (SiC), silicon carbonitride (SiCN), and titanium nitride (TiN) as our diffusion layer. Using the RF plasma and the magnetron gun with 1,1,1,2 tetrafluoroethane and oxygen as the active gases, we will obtain a reliable and reproducible method for determining the maximum etch rate for the various materials. An etch is required in order for a proper ground contact with the substrate. Si and A1 selectivity will also be discussed. The etch process along with the aluminum mask are prepared using standard photolithography techniques, and reactive ion etching (RIE) parameters (pressure and power) will be discussed. RIE is chemistry-specific process that enables the selective etching of sample elements. Etch profiles were taken using a profilometer."],"dc:format":["Text"],"dc:format.medium":["1 file (.pdf)"],"dc:identifier.uri":["https://hdl.handle.net/10877/12042"],"dc:language.iso":["en"],"dc:subject":["plasma etching","diffusion","silicon carbonitride","titanium nitride","tetrafluoroethane","oxygen plasma"],"dc:title":["Reactive Plasma Etching of Silicon Carbide, Silicon Carbonitride, and Titanium Nitride in a Tetrafluoroethane/Oxygen Plasma"],"dc:type":["Thesis"],"thesis:degree_discipline":["Physics"],"thesis:degree_level":["Masters"],"thesis:degree_name":["Master of Science"],"thesis:institution_name":["Texas State University-San Marcos"]},"updated_at":"2026-07-27T21:22:45Z"}