Reactive DC magnetron sputtering of ultrathin superconducting niobium nitride films

DC reactive magnetron sputtering was used to deposit few-nanometer-thick films of niobium nitride for fabrication of superconducting devices. Over 1000 samples were deposited on a variety of substrates, under various chamber conditions. Sheet resistance, thickness and superconducting critical temperature were measured for a large number of samples. Film Tc was improved by changing the way the samples were heated during the deposition, by ex situ rapid thermal processing, and in some cases by the addition of an RF bias to the substrate holder during the sputter deposition. These improvements to the deposition of NbN have enabled the production of superconducting nanowire single photon detectors whose quantum efficiency saturates and was the starting point for work on the superconductor-insulator transition.

Department dc:contributor.department

Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science.

Grantor dc:publisher

Massachusetts Institute of Technology

Year dc:date.issued

2015

Author dc:creator

• Dane, Andrew E. (Andrew Edward)

Advisor dc:contributor.advisor

• Karl K. Berggren.

• Electrical Engineering and Computer Science.

Statement dc:rights

• M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.

Licence dc:rights.uri

• http://dspace.mit.edu/handle/1721.1/7582

Language dc:language.iso

eng

Handle dc:identifier.uri

http://hdl.handle.net/1721.1/97257

OAI identifier oai:identifier

oai:dspace.mit.edu:1721.1/97257