{"id":{"repo_id":"mit","oai_identifier":"oai:dspace.mit.edu:1721.1/97257"},"canonical_url":"https://search.dev.ndltd.org/etd/mit/oai:dspace.mit.edu:1721.1/97257","repository":{"repo_id":"mit","name":"MIT","base_url":"https://dspace.mit.edu/oai/request"},"display":{"title":"Reactive DC magnetron sputtering of ultrathin superconducting niobium nitride films","abstract":"DC reactive magnetron sputtering was used to deposit few-nanometer-thick films of niobium nitride for fabrication of superconducting devices. Over 1000 samples were deposited on a variety of substrates, under various chamber conditions. Sheet resistance, thickness and superconducting critical temperature were measured for a large number of samples. Film Tc was improved by changing the way the samples were heated during the deposition, by ex situ rapid thermal processing, and in some cases by the addition of an RF bias to the substrate holder during the sputter deposition. These improvements to the deposition of NbN have enabled the production of superconducting nanowire single photon detectors whose quantum efficiency saturates and was the starting point for work on the superconductor-insulator transition.","abstract_html":"DC reactive magnetron sputtering was used to deposit few-nanometer-thick films of niobium nitride for fabrication of superconducting devices. Over 1000 samples were deposited on a variety of substrates, under various chamber conditions. Sheet resistance, thickness and superconducting critical temperature were measured for a large number of samples. Film Tc was improved by changing the way the samples were heated during the deposition, by ex situ rapid thermal processing, and in some cases by the addition of an RF bias to the substrate holder during the sputter deposition. These improvements to the deposition of NbN have enabled the production of superconducting nanowire single photon detectors whose quantum efficiency saturates and was the starting point for work on the superconductor-insulator transition.","abstract_has_math":false,"creators":["Dane, Andrew E. (Andrew Edward)"],"institution":"Massachusetts Institute of Technology","degree_name":null,"degree_level":null,"degree_discipline":null,"degree_department":"Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science.","school":null,"contributors":[],"advisors":["Karl K. Berggren."],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015","date_published":"2015","updated_at":"2026-07-22T22:21:37Z","subjects":["Electrical Engineering and Computer Science."],"languages":["eng"],"rights":["M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission."],"rights_urls":["http://dspace.mit.edu/handle/1721.1/7582"],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/1721.1/97257","outbound_label":"Handle","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor.advisor","label":"Advisor","values":["Karl K. Berggren."]},{"key":"dc:contributor.department","label":"Department","values":["Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science."]},{"key":"dc:contributor.other","label":"Dc Contributor Other","values":["Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science."]},{"key":"dc:creator","label":"Author","values":["Dane, Andrew E. 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They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission."]},{"key":"dc:rights.uri","label":"Rights URI","values":["http://dspace.mit.edu/handle/1721.1/7582"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.uri","label":"Identifier URI","values":["http://hdl.handle.net/1721.1/97257"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Thesis: S.M. in Electrical Engineering, Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2015.","This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.","Cataloged from student-submitted PDF version of thesis.","Includes bibliographical references."]},{"key":"dc:description.abstract","label":"Abstract","values":["DC reactive magnetron sputtering was used to deposit few-nanometer-thick films of niobium nitride for fabrication of superconducting devices. Over 1000 samples were deposited on a variety of substrates, under various chamber conditions. Sheet resistance, thickness and superconducting critical temperature were measured for a large number of samples. Film Tc was improved by changing the way the samples were heated during the deposition, by ex situ rapid thermal processing, and in some cases by the addition of an RF bias to the substrate holder during the sputter deposition. These improvements to the deposition of NbN have enabled the production of superconducting nanowire single photon detectors whose quantum efficiency saturates and was the starting point for work on the superconductor-insulator transition."]},{"key":"dc:description.degree","label":"Dc Description Degree","values":["S.M. in Electrical Engineering"]},{"key":"dc:title","label":"Title","values":["Reactive DC magnetron sputtering of ultrathin superconducting niobium nitride films"]}]}],"canonical_facts":{"dc:contributor.advisor":["Karl K. Berggren."],"dc:contributor.department":["Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science."],"dc:contributor.other":["Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science."],"dc:creator":["Dane, Andrew E. (Andrew Edward)"],"dc:date.accessioned":["2015-06-10T18:40:22Z"],"dc:date.available":["2015-06-10T18:40:22Z"],"dc:date.issued":["2015"],"dc:description":["Thesis: S.M. in Electrical Engineering, Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2015.","This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.","Cataloged from student-submitted PDF version of thesis.","Includes bibliographical references."],"dc:description.abstract":["DC reactive magnetron sputtering was used to deposit few-nanometer-thick films of niobium nitride for fabrication of superconducting devices. Over 1000 samples were deposited on a variety of substrates, under various chamber conditions. Sheet resistance, thickness and superconducting critical temperature were measured for a large number of samples. Film Tc was improved by changing the way the samples were heated during the deposition, by ex situ rapid thermal processing, and in some cases by the addition of an RF bias to the substrate holder during the sputter deposition. These improvements to the deposition of NbN have enabled the production of superconducting nanowire single photon detectors whose quantum efficiency saturates and was the starting point for work on the superconductor-insulator transition."],"dc:description.degree":["S.M. in Electrical Engineering"],"dc:identifier.uri":["http://hdl.handle.net/1721.1/97257"],"dc:language.iso":["eng"],"dc:publisher":["Massachusetts Institute of Technology"],"dc:rights":["M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission."],"dc:rights.uri":["http://dspace.mit.edu/handle/1721.1/7582"],"dc:subject":["Electrical Engineering and Computer Science."],"dc:title":["Reactive DC magnetron sputtering of ultrathin superconducting niobium nitride films"],"dc:type":["Thesis"]},"updated_at":"2026-07-22T22:21:37Z"}