Fabrication of graphene-on-GaN vertical transistors

The excellent transport properties of graphene make it an excellent option for very high frequency electronics. However, the poor output resistance and difficult lithography of lateral transistors significantly limit its performance. In this thesis, we propose a new kind of vertical graphene base transistor to take advantage of both wide bandgap GaN semiconductors and zero bandgap graphene for high frequency transistors. This majority-carrier device has a metal collector, a graphene base and an AlGaN/GaN emitter. The first device prototype exhibits very promising current density(~mA/cm 2 ) and current gain ([alpha] ~ 50 %). Simulations further support that with proper optimization of the materials and device structure, the proposed transistor can be a promising candidate for future high frequency applications.

Department dc:contributor.department

Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science

Grantor dc:publisher

Massachusetts Institute of Technology

Year dc:date.issued

2014

Author dc:creator

• Zubair, Ahmad, Ph.D. Massachusetts Institute of Technology

Advisor dc:contributor.advisor

• Tomás Palacios and Mildred S. Dresselhaus.

• Electrical Engineering and Computer Science.

Statement dc:rights

• M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.

Licence dc:rights.uri

• http://dspace.mit.edu/handle/1721.1/7582

Language dc:language.iso

eng

Handle dc:identifier.uri

http://hdl.handle.net/1721.1/93064

OAI identifier oai:identifier

oai:dspace.mit.edu:1721.1/93064