{"id":{"repo_id":"mit","oai_identifier":"oai:dspace.mit.edu:1721.1/93064"},"canonical_url":"https://search.dev.ndltd.org/etd/mit/oai:dspace.mit.edu:1721.1/93064","repository":{"repo_id":"mit","name":"MIT","base_url":"https://dspace.mit.edu/oai/request"},"display":{"title":"Fabrication of graphene-on-GaN vertical transistors","abstract":"The excellent transport properties of graphene make it an excellent option for very high frequency electronics. However, the poor output resistance and difficult lithography of lateral transistors significantly limit its performance. In this thesis, we propose a new kind of vertical graphene base transistor to take advantage of both wide bandgap GaN semiconductors and zero bandgap graphene for high frequency transistors. This majority-carrier device has a metal collector, a graphene base and an AlGaN/GaN emitter. The first device prototype exhibits very promising current density(~mA/cm 2 ) and current gain ([alpha] ~ 50 %). Simulations further support that with proper optimization of the materials and device structure, the proposed transistor can be a promising candidate for future high frequency applications.","abstract_html":"The excellent transport properties of graphene make it an excellent option for very high frequency electronics. However, the poor output resistance and difficult lithography of lateral transistors significantly limit its performance. In this thesis, we propose a new kind of vertical graphene base transistor to take advantage of both wide bandgap GaN semiconductors and zero bandgap graphene for high frequency transistors. This majority-carrier device has a metal collector, a graphene base and an AlGaN/GaN emitter. The first device prototype exhibits very promising current density(~mA/cm 2 ) and current gain ([alpha] ~ 50 %). Simulations further support that with proper optimization of the materials and device structure, the proposed transistor can be a promising candidate for future high frequency applications.","abstract_has_math":false,"creators":["Zubair, Ahmad, Ph.D. Massachusetts Institute of Technology"],"institution":"Massachusetts Institute of Technology","degree_name":null,"degree_level":null,"degree_discipline":null,"degree_department":"Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science","school":null,"contributors":[],"advisors":["Tomás Palacios and Mildred S. Dresselhaus."],"committee_chairs":[],"committee_members":[],"year":2014,"date_issued":"2014","date_published":"2014","updated_at":"2026-07-22T22:22:06Z","subjects":["Electrical Engineering and Computer Science."],"languages":["eng"],"rights":["M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission."],"rights_urls":["http://dspace.mit.edu/handle/1721.1/7582"],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/1721.1/93064","outbound_label":"Handle","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor.advisor","label":"Advisor","values":["Tomás Palacios and Mildred S. Dresselhaus."]},{"key":"dc:contributor.department","label":"Department","values":["Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science"]},{"key":"dc:contributor.other","label":"Dc Contributor Other","values":["Massachusetts Institute of Technology. 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They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission."]},{"key":"dc:rights.uri","label":"Rights URI","values":["http://dspace.mit.edu/handle/1721.1/7582"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.uri","label":"Identifier URI","values":["http://hdl.handle.net/1721.1/93064"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Thesis: S.M., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2014.","Bibliographical references 35-37 missing from the bibliography. Cataloged from PDF version of thesis.","Includes bibliographical references (pages 61-[64])."]},{"key":"dc:description.abstract","label":"Abstract","values":["The excellent transport properties of graphene make it an excellent option for very high frequency electronics. However, the poor output resistance and difficult lithography of lateral transistors significantly limit its performance. In this thesis, we propose a new kind of vertical graphene base transistor to take advantage of both wide bandgap GaN semiconductors and zero bandgap graphene for high frequency transistors. This majority-carrier device has a metal collector, a graphene base and an AlGaN/GaN emitter. The first device prototype exhibits very promising current density(~mA/cm 2 ) and current gain ([alpha] ~ 50 %). Simulations further support that with proper optimization of the materials and device structure, the proposed transistor can be a promising candidate for future high frequency applications."]},{"key":"dc:description.degree","label":"Dc Description Degree","values":["S.M."]},{"key":"dc:title","label":"Title","values":["Fabrication of graphene-on-GaN vertical transistors"]}]}],"canonical_facts":{"dc:contributor.advisor":["Tomás Palacios and Mildred S. Dresselhaus."],"dc:contributor.department":["Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science"],"dc:contributor.other":["Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science."],"dc:creator":["Zubair, Ahmad, Ph.D. Massachusetts Institute of Technology"],"dc:date.accessioned":["2015-01-20T17:59:19Z"],"dc:date.available":["2015-01-20T17:59:19Z"],"dc:date.issued":["2014"],"dc:description":["Thesis: S.M., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2014.","Bibliographical references 35-37 missing from the bibliography. Cataloged from PDF version of thesis.","Includes bibliographical references (pages 61-[64])."],"dc:description.abstract":["The excellent transport properties of graphene make it an excellent option for very high frequency electronics. However, the poor output resistance and difficult lithography of lateral transistors significantly limit its performance. In this thesis, we propose a new kind of vertical graphene base transistor to take advantage of both wide bandgap GaN semiconductors and zero bandgap graphene for high frequency transistors. This majority-carrier device has a metal collector, a graphene base and an AlGaN/GaN emitter. The first device prototype exhibits very promising current density(~mA/cm 2 ) and current gain ([alpha] ~ 50 %). Simulations further support that with proper optimization of the materials and device structure, the proposed transistor can be a promising candidate for future high frequency applications."],"dc:description.degree":["S.M."],"dc:identifier.uri":["http://hdl.handle.net/1721.1/93064"],"dc:language.iso":["eng"],"dc:publisher":["Massachusetts Institute of Technology"],"dc:rights":["M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission."],"dc:rights.uri":["http://dspace.mit.edu/handle/1721.1/7582"],"dc:subject":["Electrical Engineering and Computer Science."],"dc:title":["Fabrication of graphene-on-GaN vertical transistors"],"dc:type":["Thesis"]},"updated_at":"2026-07-22T22:22:06Z"}