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Showing 1 to 11 of 11 for “"High-Frequency Electronics"”.

  1. High-Frequency Electronics for Contactless Dielectrophoresis

    … This work presents two methods for providing the high-voltage and high-frequency signal necessary to generate a non-uniform electric field in the sample channel of a cDEP device. The first method, an oscillator-based system, was able to produce DEP trapping and pearl-chaining of THP-1 and MCF-7 …

    vt Repository record for High-Frequency Electronics for Contactless Dielectrophoresis (opens in a new tab)

  2. Gallium nitride MEMS resonators

    … Nitride (GaN) has been increasingly used in high-power, high-frequency electronics and monolithic microwave integrated circuits (MMICs). At the same time, GaN also has excellent electromechanical properties, such as high acoustic velocities and low elastic losses. Together with a strong …

    mit Repository record for Gallium nitride MEMS resonators (opens in a new tab)

  3. Fabrication of graphene-on-GaN vertical transistors

    … of graphene make it an excellent option for very high frequency electronics. However, the poor output resistance and difficult lithography of lateral transistors significantly limit its performance. In this thesis, we propose a new kind of vertical graphene base transistor to take advantage of …

    mit Repository record for Fabrication of graphene-on-GaN vertical transistors (opens in a new tab)

  4. Development of a Low-Cost PCB-Based High-Frequency AC Susceptometer for Magnetic Materials Characterization

    … evaluation of femtoMag, a novel, cost-effective high-frequency AC susceptometer designed to characterize magnetic materials up to 200 MHz. Leveraging a low-cost printed circuit board (PCB) design and commercially available high-frequency electronics, femtoMag addresses limitations in conventional …

    houston Repository record for Development of a Low-Cost PCB-Based High-Frequency AC Susceptometer for Magnetic Materials Characterization (opens in a new tab)

  5. N-polar n-GaN MOSCAP and Tunnel Junctions Toward p-GaN MOSCAP

    … of unique polarization characteristics, high electron mobility, and saturation velocity, gallium nitride (GaN) material has emerged as a key contender in the high-performance semiconductor market, paving the way for the future optoelectronics and high-frequency electronics. The …

    cornell Repository record for N-polar n-GaN MOSCAP and Tunnel Junctions Toward p-GaN MOSCAP (opens in a new tab)

  6. Development of Compound Semiconductor FET and Integrated Low -Voltage RF MEMS Switch Technology for Reconfigurable MMIC Applications

    The world of high-frequency electronics is a varied field with many competing technologies striving to meet the requirements of future systems. Compound semiconductors have had a significant impact on this field, finding commercial success in millimeter-wave integrated circuit (MMIC) and …

    uiuc Repository record for Development of Compound Semiconductor FET and Integrated Low -Voltage RF MEMS Switch Technology for Reconfigurable MMIC Applications (opens in a new tab)

  7. Microwave plasma synthesis of nano-sized silicon carbide at atmospheric pressure

    … allow application across many areas, including high-power, high-frequency electronics and high-temperature technologies. Many different synthesis methods for the creation of SiC nanoparticles have been studied, including carbothermic reduction, pulsed laser deposition, sol-gel processes, …

    pretoria Repository record for Microwave plasma synthesis of nano-sized silicon carbide at atmospheric pressure (opens in a new tab)

  8. Broadband whole package FDTD simulation

    … and more important with the rapid expansion of high frequency electronics. The motivation of this thesis is to find and implement a new method for broadband whole package simulation. 3-dimension (3-D) whole package Finite Difference Time Domain (FDTD) simulation result was first reported in …

    njit Repository record for Broadband whole package FDTD simulation (opens in a new tab)

  9. Heat Pipes for the Thermal Management of High Frequency Transformers in the Navy integrated Power Electronics Building Block

    The development of the integrated Power Electronics Building Block (iPEBB) is key to the full electrification of future United States Navy ships. The creation of this modular, universal power converter takes full advantage of modern electronics; however, the high heat generation of these …

    mit Repository record for Heat Pipes for the Thermal Management of High Frequency Transformers in the Navy integrated Power Electronics Building Block (opens in a new tab)

  10. Device-level thermal analysis of GaN-based electronics

    Gallium nitride (GaN)-based microelectronics are one of the most exciting semiconductor technologies for high power density and high frequency electronics. The excellent electrical properties of GaN and its related alloys (high critical electric field, carrier concentration, and carrier mobility) …

    mit Repository record for Device-level thermal analysis of GaN-based electronics (opens in a new tab)