Characterization of novel III-V semiconductor devices

This thesis presents the characterization of tunnel junctions and tunnel-junction-coupled lasers. The reverse-biased leakage current in a tunnel junction can be exploited to tunnel electrons from the valence band of one active region to the conduction band of a second active region. Thus, tunnel-junction-coupled lasers are highly efficient as they allow electrons to stimulate the emission of photons in more than one active region. The electrical characterization of InGaAs/GaAs tunnel junctions is presented. This thesis also gives an overview of the electrical and optical behavior of single-stage lasers as well as two-stage lasers coupled by InGaAs/GaAs tunnel junctions. Telecommunication applications motivated the use of InAs quantum dots and InAsP quantum dashes in the active layer design to provide near-infrared emission.

Department dc:contributor.department

Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.

Grantor dc:publisher

Massachusetts Institute of Technology

Year dc:date.issued

2006

Author dc:creator

• Young, Sue Y

Advisor dc:contributor.advisor

• Leslie A. Kolodziejski.

• Electrical Engineering and Computer Science.

Statement dc:rights

• M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.

Licence dc:rights.uri

• http://dspace.mit.edu/handle/1721.1/7582

Language dc:language.iso

eng

Handle dc:identifier.uri

http://hdl.handle.net/1721.1/37094

OAI identifier oai:identifier

oai:dspace.mit.edu:1721.1/37094