{"id":{"repo_id":"mit","oai_identifier":"oai:dspace.mit.edu:1721.1/37094"},"canonical_url":"https://search.dev.ndltd.org/etd/mit/oai:dspace.mit.edu:1721.1/37094","repository":{"repo_id":"mit","name":"MIT","base_url":"https://dspace.mit.edu/oai/request"},"display":{"title":"Characterization of novel III-V semiconductor devices","abstract":"This thesis presents the characterization of tunnel junctions and tunnel-junction-coupled lasers. The reverse-biased leakage current in a tunnel junction can be exploited to tunnel electrons from the valence band of one active region to the conduction band of a second active region. Thus, tunnel-junction-coupled lasers are highly efficient as they allow electrons to stimulate the emission of photons in more than one active region. The electrical characterization of InGaAs/GaAs tunnel junctions is presented. This thesis also gives an overview of the electrical and optical behavior of single-stage lasers as well as two-stage lasers coupled by InGaAs/GaAs tunnel junctions. Telecommunication applications motivated the use of InAs quantum dots and InAsP quantum dashes in the active layer design to provide near-infrared emission.","abstract_html":"This thesis presents the characterization of tunnel junctions and tunnel-junction-coupled lasers. The reverse-biased leakage current in a tunnel junction can be exploited to tunnel electrons from the valence band of one active region to the conduction band of a second active region. Thus, tunnel-junction-coupled lasers are highly efficient as they allow electrons to stimulate the emission of photons in more than one active region. The electrical characterization of InGaAs/GaAs tunnel junctions is presented. This thesis also gives an overview of the electrical and optical behavior of single-stage lasers as well as two-stage lasers coupled by InGaAs/GaAs tunnel junctions. Telecommunication applications motivated the use of InAs quantum dots and InAsP quantum dashes in the active layer design to provide near-infrared emission.","abstract_has_math":false,"creators":["Young, Sue Y"],"institution":"Massachusetts Institute of Technology","degree_name":null,"degree_level":null,"degree_discipline":null,"degree_department":"Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.","school":null,"contributors":[],"advisors":["Leslie A. Kolodziejski."],"committee_chairs":[],"committee_members":[],"year":2006,"date_issued":"2006","date_published":"2006","updated_at":"2026-07-22T22:22:22Z","subjects":["Electrical Engineering and Computer Science."],"languages":["eng"],"rights":["M.I.T. theses are protected by copyright. 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Thus, tunnel-junction-coupled lasers are highly efficient as they allow electrons to stimulate the emission of photons in more than one active region. The electrical characterization of InGaAs/GaAs tunnel junctions is presented. This thesis also gives an overview of the electrical and optical behavior of single-stage lasers as well as two-stage lasers coupled by InGaAs/GaAs tunnel junctions. Telecommunication applications motivated the use of InAs quantum dots and InAsP quantum dashes in the active layer design to provide near-infrared emission."],"dc:description.degree":["M.Eng."],"dc:identifier.uri":["http://hdl.handle.net/1721.1/37094"],"dc:language.iso":["eng"],"dc:publisher":["Massachusetts Institute of Technology"],"dc:rights":["M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. 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