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Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.

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Showing 1 to 20 of 263 for “"Semiconductor devices"”.

  1. Hybrid plasma-semiconductor devices

    A hybrid plasma-semiconductor phototransistor has been realized by substituting a plasma for the collector of an npn bipolar junction transistor. Designated as the plasma bipolar junction transistor (PBJT), this optoelectronic device relies on the correspondence between the properties of a low …

    uiuc Repository record for Hybrid plasma-semiconductor devices (opens in a new tab)

  2. Current fluctuations in semiconductor devices

    Thesis (M.Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2002.

    mit Repository record for Current fluctuations in semiconductor devices (opens in a new tab)

  3. Novel Power Semiconductor Devices and Technologies

    … towards the development of efficient power semiconductor devices. It will focus upon the development of 1200V and 1700V fast recovery diodes and two MOS gated thyristor structures viz. the Accumulation Layer enhanced Emitter Switched Thyristor (ALEST) and the Clustered IGBT (CIGBT). …

    de-montfort Repository record for Novel Power Semiconductor Devices and Technologies (opens in a new tab)

  4. High current pulse characterization of semiconductor devices

    … into the turn-off dynamics of snapback-type devices. Device measurement data are presented to demonstrate the capabilities of EETLP.

    uiuc Repository record for High current pulse characterization of semiconductor devices (opens in a new tab)

  5. Computer-Automated Electrical Characterization of Semiconductor Devices

    Made available in DSpace on 2014-12-12T20:54:30Z (GMT). No. of bitstreams: 1 7709080.pdf: 3686200 bytes, checksum: 7adfa8bbe90c26249e6dcf0f63546c30 (MD5) Previous issue date: 1976

    uiuc Repository record for Computer-Automated Electrical Characterization of Semiconductor Devices (opens in a new tab)

  6. Characterization of novel III-V semiconductor devices

    This thesis presents the characterization of tunnel junctions and tunnel-junction-coupled lasers. The reverse-biased leakage current in a tunnel junction can be exploited to tunnel electrons from the valence band of one active region to the conduction band of a second active region. Thus, …

    mit Repository record for Characterization of novel III-V semiconductor devices (opens in a new tab)

  7. TCAD-Informed Surrogate Models of Semiconductor Devices

    … over the last half-century to develop models of semiconductor devices for use in circuit analysis and simulation. Such models typically fall into one of two categories: “Cheap” analytical models that can be solved quickly but introduce significant error, and “expensive” physics-based models that …

    mit Repository record for TCAD-Informed Surrogate Models of Semiconductor Devices (opens in a new tab)

  8. Simulation of hot carriers in semiconductor devices

    Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1995.

    mit Repository record for Simulation of hot carriers in semiconductor devices (opens in a new tab)

  9. Ferrite characterization techniques & particle simulations for semiconductor devices

    … The second topic, particle simulations for semiconductor devices, is discussed in the last paper. In the first paper, the method for extracting permeability from ferrite materials is discussed for the Keysight 16454A permeability extraction fixture, where the ferrite material to be …

    must-thes Repository record for Ferrite characterization techniques & particle simulations for semiconductor devices (opens in a new tab)

  10. Band Engineering of Advanced Materials for Semiconductor Devices

    As the downscaling of metal–oxide–semiconductor field-effect transistors (MOSFETs) continues, the short-channel effects (SCEs) and contact resistance severely degrade device performance. It is crucial to understand the physics at various interfacial regions of MOSFETs to provide guidance for …

    cambridge Repository record for Band Engineering of Advanced Materials for Semiconductor Devices (opens in a new tab)

  11. MODELLING AND DESIGN OF DIAMOND POWER SEMICONDUCTOR DEVICES

    … advantages over Silicon and wide bandgap semiconductors (WBG) for ultra-high voltage and high temperature applications (>3 kV and >450 K, respectively). However, despite its tremendous potential, fabricated devices based on this material have not yet delivered the expected …

    cambridge Repository record for MODELLING AND DESIGN OF DIAMOND POWER SEMICONDUCTOR DEVICES (opens in a new tab)

  12. Studies on semiconductor devices as gas and vapour sensors

    greenwich

  13. TCAD approaches to multidimensional simulation of advanced semiconductor devices

    … and non-ideality of the electrical behavior of semiconductor devices and boosts interest on alternatives to the conventional planar MOSFET architecture. TCAD simulation tools are fundamental to the analysis and development of new technology generations. However, the increasing device complexity …

    bologna Repository record for TCAD approaches to multidimensional simulation of advanced semiconductor devices (opens in a new tab)

  14. Three-Dimensional Granular Monte Carlo Simulation of Semiconductor Devices

    … like the P3M-EMC method can simulate very-small devices with modest additional cost compared to the traditional Monte Carlo device simulation method, and such methods will likely continue to be useful ways to model ultrasmall semiconductor devices.

    uiuc Repository record for Three-Dimensional Granular Monte Carlo Simulation of Semiconductor Devices (opens in a new tab)

  15. Hard Switched Robustness of Wide Bandgap Power Semiconductor Devices

    … is necessary. The robustness of power semiconductor devices, a primary component of power converters, has been traditionally evaluated through qualification tests that were developed for legacy silicon (Si) technologies. However, new devices have been commercialized using wide bandgap …

    vt Repository record for Hard Switched Robustness of Wide Bandgap Power Semiconductor Devices (opens in a new tab)

  16. High voltage packaging technology for wide bandgap power semiconductor devices

    cambridge

  17. Monte Carlo Simulation of Nanostructures: Semiconductor Devices to Ion Channels

    … model and its application for simulation of semiconductor devices and biological ion channels. A quantum corrected 3-D Monte Carlo simulator has been developed to investigate the various physical phenomena underlying nanoscale semiconductor devices. The results for two-dimensional capacitors …

    uiuc Repository record for Monte Carlo Simulation of Nanostructures: Semiconductor Devices to Ion Channels (opens in a new tab)

  18. Ultrafast nonlinear optical properties of passive and active semiconductor devices

    … amplifiers, silicon nanowaveguides, and III-V semiconductor saturable Bragg reflectors are studied. The limits imposed by two photon absorption and free-carrier absorption on the gain and output powers of an InGaAsP/InP slab-coupled optical waveguide amplifier with a confinement factor of …

    mit Repository record for Ultrafast nonlinear optical properties of passive and active semiconductor devices (opens in a new tab)

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