Insertion of metal oxides into block copolymer nanopatterns as robust etch masks for nanolithography

Directed self-assembly (DSA) of block copolymers (BCPs) is a prime candidate to further extend dimensional scaling of silicon integrated circuit features for the nanoelectronic industry. Top-down optical techniques employed for photoresist patterning are predicted to reach an endpoint due to diffraction limits. Additionally, the prohibitive costs for “fabs” and high volume manufacturing tools are issues that have led the search for alternative complementary patterning processes. This thesis reports the fabrication of semiconductor features from nanoscale on-chip etch masks using “high χ” BCP materials. Fabrication of silicon and germanium nanofins via metal-oxide enhanced BCP on-chip etch masks that might be of importance for future Fin-field effect transistor (FinFETs) application are detailed.

Grantor dc:publisher

University College Cork

Year dc:date.issued

2015

Author dc:creator

• Cummins, Cian

Advisors dc:contributor.advisor

• Morris, Michael A.
• Holmes, Justin D.

• Nanotechnology
• Materials science
• Metal oxides
• Block copolymers
• Polymers
• Nanolithography
• Silicon
• Semiconductors
• Nanopatterns

Statement dc:rights

• © 2015, Cian A. Cummins

Licence dc:rights.uri

• http://creativecommons.org/licenses/by-nc-nd/3.0/

Language dc:language.iso

en

Handle dc:identifier.uri

https://hdl.handle.net/10468/2131

OAI identifier oai:identifier

oai:cora.ucc.ie:10468/2131