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Showing 1 to 20 of 4010 for “"Silicon"”.
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Hybrid silicon/silicon carbide microstructures and silicon bond strength tests for the MIT Microengine
… research topics: first, the use of hybrid silicon/silicon carbide structures to extend the operating envelope of the first generation microengine, and second, a testing technique to measure the toughness of silicon to silicon fusion bonds. Due to the relatively low strength of Si at high …
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Silicon rich nitride for silicon based laser devices
Silicon based light sources, especially laser devices, are the key components required to achieve a complete integrated silicon photonics system. However, the fundamental physical limitation of the silicon material as light emitter and the limited understanding of tli~ excitation mechanism of Er in …
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Optical properties of nanostructured silicon-rich silicon dioxide
… a study of the optical properties of sputtered silicon-rich silicon dioxide (SRO) thin films with specific application for the fabrication of erbium-doped waveguide amplifiers and lasers, polarization sensitive devices and devices to modify the polarization state of light. The SRO thin films …
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Modeling of a silicon/silicon carbide pressureless infiltration process
… several small protrusions on the surface of silicon/silicon carbide metal matrix composites, which were created using a customized pressureless infiltration technique. These protrusions, called overfillings, differed in size and were spontaneously distributed on the surface of the infiltrated …
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Silicon infiltration of silicon carbide selective laser sintered preforms
… to skeletal microstructures. In this study, silicon carbide preforms are created using selective laser sintering. These parts are then infiltrated with an epoxy to decrease slumping of the part. They are then infiltrated using high temperature pressureless infiltration of a silicon matrix. …
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Quantitative Electron Microscopy Studies of Silicon Germanium/silicon(001)
Over the last decade, much progress has been made in understanding the thermodynamic and kinetic properties of self-assembled quantum dot structures. These structures form as a result of the strain energy in mismatched epitaxial systems. Ge/Si(001) has been investigated for its potential importance …
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Thermal conductivity of reaction-infiltrated silicon-silicon carbide composites
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1996.
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Etching of Silicon, Silicon Nitride, and Atomic Layer Etching of Silicon Dioxide using Inductively Coupled Plasma Beams
Selective, anisotropic etching of silicon nitride (SiN) over Si or SiO2 is vital for fin field-effect transistor (FinFET) fabrication. Anisotropic etching with high selectivity of SiN over Si, and moderate selectivity over SiO2, can be achieved by ion-assisted etching using hydrofluorocarbon gases, …
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Mixed-Phase Solidification of Thin Silicon Films on Silicon Dioxide
In this thesis, we present a new beam-induced melt-mediated crystallization process called mixed-phase solidification (MPS) that can produce defect-free, large-grain polycrystalline-Si films with strong (100)-surface texture (>99%) on SiO2. Such a combination of microstructural attributes makes the …
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Silicon/silicon Oxide Interface Roughness Studied by Scanning Tunneling Microscopy
Si/SiO2 interface roughness has been related to the inversion layer carrier mobility degradation, gate dielectric reliability, gate leakage current, and ballistic transmittance, yet the quantitatively measurement of the Si/SiO2 interface has not been achieved at the nanometer scale. For the first …
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Alternative chemistries for etching of silicon dioxide and silicon nitride
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1997.
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Characterization and modeling of silicon and silicon carbide power devices
… software package developed for constructing silicon (Si) and silicon carbide (SiC) power diode models, which is called DIode Model Parameter extrACtion Tools (DIMPACT). This software tool extracts the data necessary to establish a library of power diode component models and provides a method …
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Electroreflectance of silicon
Submitted by William Weathers (weathrs2@illinois.edu) on 2012-04-12T21:49:32Z No. of bitstreams: 1 1973_grover.pdf: 2607668 bytes, checksum: cd6ed81744c48c6e0917a30086d90b44 (MD5)
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Synthesis and characterization of silicon nanowires, silicon nanorods, and magnetic nanocrystals
Silicon nanowires, silicon nanorods, and magnetic nanocrystals have shown interesting size, shape, mechanical, electronic, and/or magnetic properties and many have proposed their use in exciting applications. However, before these materials can be applied, it is critical to fully understand their …
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Charge trapping instabilities in amorphous silicon/silicon nitride thin film transistors
Charge trapping phenomena within amorphous silicon-silicon nitride TFTs have been characterised in an extensive study. A new experimental technique has been developed and applied in conjunction with the standard measurement of threshold voltage.<br/><br/>The new technique reveals two electron …
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Investigations of Electron Scattering Mechanisms at the Silicon - Silicon-Dioxide Interface
Made available in DSpace on 2015-05-12T21:41:56Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 7020957.PDF: 4655744 bytes, checksum: f9dd506b5c1e261c939f094a9be8b7f2 (MD5) Previous issue date: 1970
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Investigations of electron scattering mechanisms at the silicon-silicon dioxide interface
… scattering mechanisms of electrons at the silicon-silicon dioxide interface. Theoretical surface conductivity mobility in a semiconductor space-charge region for the temperature range 1000K to 4000K was calculated using a classical Boltzmann-Fuchs equation with constant field and constant …
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Sputtering fabrication of silicon nitride and silicon oxide based dichroic mirrors
… spectrum for future solar-cell applications. Silicon oxide and silicon nitride targets were selected as materials used in the sputtering process. The sputtered multilayers and films were then characterized and analyzed using spectrophotometry. The transmission spectrum of the initial …
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Impurity-induced layer disordering of quantum well heterostructures by silicon diffusion from aluminum-reduced silicon dioxide and silicon nitride
In these experiments, impurity-induced layer disordering (IILD) utilizing the chemical reduction of SiO$\sb2$ by Al (from high-percentage Al$\sb{\rm x}$Ga$\sb{\rm 1-x}$As) is employed to produce Si and O to effect layer disordering. This diffusion process is examined using secondary ion mass …
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