On the Compensation of Medium Voltage Metrology via Alternative Methods

Recent strides in silicon-carbide semiconductor technology have led to the development of medium-voltage (MV) SiC MOSFETs that feature fast switching speeds at high power levels. Significant efforts have been applied to characterizing these devices, but recent studies have revealed that currently available medium-voltage metrology is insufficient for this task. This limitation accrues in part from challenges associated with MV probe compensation and calibration. Some researchers have demonstrated improved performance by calibrating voltage probes at or near the rated voltage. However, this raises important safety concerns when the rated voltage of the probe is on the order of hundreds or even thousands of volts. Improvements to the effectiveness, accessibility, and safety of medium-voltage probe compensation are necessary to further advance the development of medium-voltage semiconductor technology and related power electronics. This thesis seeks to increase confidence in high bandwidth, medium voltage measurements by proposing two potential solutions for MV probe calibration, and it seeks to examine an updated MV probe model that provides further insight into the factors currently limiting probe compensation and calibration.

Grantor dc:publisher

University of Alabama Libraries

Year dc:date.issued

2024

Author dc:creator

• Hill, David L.

Advisor dc:contributor.advisor

• Lemmon, Andrew

Contributors dc:contributor

• Baker, Nicholas
• Vikas, Vishesh

• Calibration
• Medium Voltage
• Metrology
• Modeling
• Simulation
• Voltage Probes

Statement dc:rights

• All rights reserved by the author unless otherwise indicated.

Language dc:language.iso

en_US, English

Dc Identifier Other

1115449

OAI identifier oai:identifier

oai:ir.ua.edu:123456789/15397