{"id":{"repo_id":"alabama","oai_identifier":"oai:ir.ua.edu:123456789/15397"},"canonical_url":"https://search.dev.ndltd.org/etd/alabama/oai:ir.ua.edu:123456789/15397","repository":{"repo_id":"alabama","name":"University of Alabama","base_url":"https://ir-api.ua.edu/oai/request"},"display":{"title":"On the Compensation of Medium Voltage Metrology via Alternative Methods","abstract":"Recent strides in silicon-carbide semiconductor technology have led to the development of medium-voltage (MV) SiC MOSFETs that feature fast switching speeds at high power levels. Significant efforts have been applied to characterizing these devices, but recent studies have revealed that currently available medium-voltage metrology is insufficient for this task. This limitation accrues in part from challenges associated with MV probe compensation and calibration. Some researchers have demonstrated improved performance by calibrating voltage probes at or near the rated voltage. However, this raises important safety concerns when the rated voltage of the probe is on the order of hundreds or even thousands of volts. Improvements to the effectiveness, accessibility, and safety of medium-voltage probe compensation are necessary to further advance the development of medium-voltage semiconductor technology and related power electronics. This thesis seeks to increase confidence in high bandwidth, medium voltage measurements by proposing two potential solutions for MV probe calibration, and it seeks to examine an updated MV probe model that provides further insight into the factors currently limiting probe compensation and calibration.","abstract_html":"Recent strides in silicon-carbide semiconductor technology have led to the development of medium-voltage (MV) SiC MOSFETs that feature fast switching speeds at high power levels. Significant efforts have been applied to characterizing these devices, but recent studies have revealed that currently available medium-voltage metrology is insufficient for this task. This limitation accrues in part from challenges associated with MV probe compensation and calibration. Some researchers have demonstrated improved performance by calibrating voltage probes at or near the rated voltage. However, this raises important safety concerns when the rated voltage of the probe is on the order of hundreds or even thousands of volts. Improvements to the effectiveness, accessibility, and safety of medium-voltage probe compensation are necessary to further advance the development of medium-voltage semiconductor technology and related power electronics. This thesis seeks to increase confidence in high bandwidth, medium voltage measurements by proposing two potential solutions for MV probe calibration, and it seeks to examine an updated MV probe model that provides further insight into the factors currently limiting probe compensation and calibration.","abstract_has_math":false,"creators":["Hill, David L."],"institution":"University of Alabama Libraries","degree_name":null,"degree_level":null,"degree_discipline":null,"degree_department":null,"school":null,"contributors":["Baker, Nicholas","Vikas, Vishesh"],"advisors":["Lemmon, Andrew"],"committee_chairs":[],"committee_members":[],"year":2024,"date_issued":"2024","date_published":"2024","updated_at":"2026-07-27T18:44:14Z","subjects":["Calibration","Medium Voltage","Metrology","Modeling","Simulation","Voltage Probes"],"languages":["en_US","English"],"rights":["All rights reserved by the author unless otherwise indicated."],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier.other","label":"Dc Identifier Other","values":["1115449"],"render_values":[{"text":"1115449","href":null,"code":true}]}]},"links":{"outbound_url":"https://ir.ua.edu/handle/123456789/15397","outbound_label":"Repository record","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Baker, Nicholas","Vikas, Vishesh"]},{"key":"dc:contributor.advisor","label":"Advisor","values":["Lemmon, Andrew"]},{"key":"dc:creator","label":"Author","values":["Hill, David L."]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.accessioned","label":"Dc Date Accessioned","values":["2025-02-11T13:21:52Z"]},{"key":"dc:date.available","label":"Dc Date Available","values":["2025-02-11T13:21:52Z"]},{"key":"dc:date.issued","label":"Date","values":["2024"]},{"key":"dc:publisher","label":"Institution","values":["University of Alabama Libraries"]},{"key":"dc:type","label":"Dc Type","values":["thesis","text"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Calibration","Medium Voltage","Metrology","Modeling","Simulation","Voltage Probes"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["English"]},{"key":"dc:language.iso","label":"Language (ISO)","values":["en_US"]},{"key":"dc:rights","label":"Dc Rights","values":["All rights reserved by the author unless otherwise indicated."]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.other","label":"Dc Identifier Other","values":["1115449"]},{"key":"dc:identifier.uri","label":"Identifier URI","values":["https://ir.ua.edu/handle/123456789/15397"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Electronic Thesis or Dissertation"]},{"key":"dc:description.abstract","label":"Abstract","values":["Recent strides in silicon-carbide semiconductor technology have led to the development of medium-voltage (MV) SiC MOSFETs that feature fast switching speeds at high power levels. Significant efforts have been applied to characterizing these devices, but recent studies have revealed that currently available medium-voltage metrology is insufficient for this task. This limitation accrues in part from challenges associated with MV probe compensation and calibration. Some researchers have demonstrated improved performance by calibrating voltage probes at or near the rated voltage. However, this raises important safety concerns when the rated voltage of the probe is on the order of hundreds or even thousands of volts. Improvements to the effectiveness, accessibility, and safety of medium-voltage probe compensation are necessary to further advance the development of medium-voltage semiconductor technology and related power electronics. This thesis seeks to increase confidence in high bandwidth, medium voltage measurements by proposing two potential solutions for MV probe calibration, and it seeks to examine an updated MV probe model that provides further insight into the factors currently limiting probe compensation and calibration."]},{"key":"dc:format.medium","label":"Dc Format Medium","values":["electronic"]},{"key":"dc:format.mimetype","label":"Dc Format Mimetype","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["On the Compensation of Medium Voltage Metrology via Alternative Methods"]}]}],"canonical_facts":{"dc:contributor":["Baker, Nicholas","Vikas, Vishesh"],"dc:contributor.advisor":["Lemmon, Andrew"],"dc:creator":["Hill, David L."],"dc:date.accessioned":["2025-02-11T13:21:52Z"],"dc:date.available":["2025-02-11T13:21:52Z"],"dc:date.issued":["2024"],"dc:description":["Electronic Thesis or Dissertation"],"dc:description.abstract":["Recent strides in silicon-carbide semiconductor technology have led to the development of medium-voltage (MV) SiC MOSFETs that feature fast switching speeds at high power levels. Significant efforts have been applied to characterizing these devices, but recent studies have revealed that currently available medium-voltage metrology is insufficient for this task. This limitation accrues in part from challenges associated with MV probe compensation and calibration. Some researchers have demonstrated improved performance by calibrating voltage probes at or near the rated voltage. However, this raises important safety concerns when the rated voltage of the probe is on the order of hundreds or even thousands of volts. Improvements to the effectiveness, accessibility, and safety of medium-voltage probe compensation are necessary to further advance the development of medium-voltage semiconductor technology and related power electronics. This thesis seeks to increase confidence in high bandwidth, medium voltage measurements by proposing two potential solutions for MV probe calibration, and it seeks to examine an updated MV probe model that provides further insight into the factors currently limiting probe compensation and calibration."],"dc:format.medium":["electronic"],"dc:format.mimetype":["application/pdf"],"dc:identifier.other":["1115449"],"dc:identifier.uri":["https://ir.ua.edu/handle/123456789/15397"],"dc:language":["English"],"dc:language.iso":["en_US"],"dc:publisher":["University of Alabama Libraries"],"dc:rights":["All rights reserved by the author unless otherwise indicated."],"dc:subject":["Calibration","Medium Voltage","Metrology","Modeling","Simulation","Voltage Probes"],"dc:title":["On the Compensation of Medium Voltage Metrology via Alternative Methods"],"dc:type":["thesis","text"]},"updated_at":"2026-07-27T18:44:14Z"}