Stresses and recrystallization in thin metallic films

This diploma thesis is divided into two parts. It covers two different issues and the experiments analyzed in this thesis have been performed in two different laboratories. The first part covers stresses in thin films, which are measured by determining the curvature of the film on a substrate using a 'wafer curvature apparatus'. It is equipped with an annealing unit and a gas cell. The annealing unit can be utilized to determine the stress and reflectivity changes of phase change material at the phase transition temperature. The gas cell allows stress and reflectivity analysis of switchable windows, which change their properties upon exposure to hydrogen. The second part of this thesis has been carried out at the Bell Laboratories of Lucent Technologies in Murray Hill, New Jersey. It covers the characterization of electroplated copper in damascene structures. These copper interconnects allow higher performance computer chips at lower costs compared to the conventional technology of aluminum interconnects. The advantage of copper is based on its low resistance, which provides good electromigration performance and allows high clock speeds. The copper electroplated into narrow trenches has unique properties analyzed in this thesis. The recrystallization at room temperature is investigated as well as the crystallographic texture of the copper.

Author dc:creator

• Drese, Robert Jens

• info:eu-repo/classification/ddc/530
• Physik
• mechanische Spannungen
• Rekristallisation
• Wafer-Curvature
• Textur
• Focused Ion Beam (FIB)
• stress
• recrystallization
• texture

Statement dc:rights

• info:eu-repo/semantics/openAccess

Language dc:language

eng

Identifier

https://publications.rwth-aachen.de/search?p=id:%22RWTH-CONV-112335%22

OAI record oai:identifier

https://publications.rwth-aachen.de/oai2d?verb=GetRecord&metadataPrefix=oai_dc&identifier=oai%3Apublications.rwth-aachen.de%3A48739