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Showing 1 to 9 of 9 for “"Wafer-Curvature"”.
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Residual Stress Development and Effect on the Piezoelectric Performance of Sol -Gel Derived Lead Zirconate Titanate (Pzt) Thin Films
… by a mediated, self-assembled monolayer. Wafer curvature stress measurements and DIC-based strain measurements of mediated monolayer patterned features reveal that the in-plane stress/strain development is reduced compared to the blanket film case. Critical in-plane strains at crack …
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Structural and electrochemical characterization of two proton conducting oxide thin films for a microfabricated solid oxide fuel cell
… measured as a function of temperature using the wafer curvature technique.
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Stresses, viscous flow and crystallization kinetics in thin films of amorphous chalcogenides used for optical data storage
… studied by differential scanning calorimetry and wafer curvature measurements. The main focus was directed to the study of their amorphous phases.
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Thermomechanical properties and performance of microfabricated solid oxide fuel cell ([mu]SOFC) structures
… Meanwhile, CTEs ( 10.5 x 10-6/oC) extracted from wafer curvature measurement during thermal cycling were independent of deposition conditions. Based on these properties, maximum in-plane stresses in the films were assessed with nonlinear plate theory, and used for uSOFC design.
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Stresses and recrystallization in thin metallic films
… films, which are measured by determining the curvature of the film on a substrate using a 'wafer curvature apparatus'. It is equipped with an annealing unit and a gas cell. The annealing unit can be utilized to determine the stress and reflectivity changes of phase change material at the phase …
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Mediated Patterning of Sol -Gel Thin Layers: Shrinkage, Decohesion, and Lift-Off
… sol-gel films, however, precise in-situ wafer curvature measurements determined that film stresses never exceeded 75 MPa. Additionally, interfacial adhesive strength between the substrate and the sol-gel film were evaluated for the first time using a unique pulsed-laser stress-wave …
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Phase change optical recording - preparation and X-ray characterization of GeSbTe and AgInSbTe films
… crystallization were determined by employing wafer curvature measurements. Temperature dependence of electrical resistance measurements of films capped with ultra thin layers (Native oxide, ZnS-SiO2, Si3N4, SiO2) show considerable influence on the crystallization kinetics.
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Characterisation of polar (0001) and non-polar (11-20) ultraviolet nitride semiconductors
… epilayers. Strain analysis based on in-situ wafer curvature measurements was employed to describe the strain relief mechanisms for different AlGaN compositions and to correlate the strain to each type of defect observed in the epilayers. This is followed by the investigation of AlN template …
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In-Situ-Messungen der mechanischen Spannungen in gesputterten Metall- und Oxidschichten
… sputtering with integrated in-situ wafer curvature setup has been developed and is presented here. At first, metal films (zinc, zirconium, niobium and titanium) have been deposited and analyzed during growth. By mixing oxygen into the sputter gas, the corresponding oxide films have …