Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 104 for “"Random Access Memory"”.
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Analysis of magnetic random access memory applications
Magnetic Random Access Memory (MRAM) is considered to be the most viable option for nonvolatile memory in the computer industry. This need for nonvolatile computer memory has resulted in the dramatic evolution of MRAM technology in the past ten years. Currently in the latter stages of development, …
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Electrochemical random access memory as deep learning accelerators
… under a 24 month embargo labeled 'U of I Access', the embargo will last until 2026-12-01
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Neuromorphic computing systems : crystalline resistive random access memory
… Silicon (Si)-based crystalline resistive random-access memory (crystalline RRAM) artificial synapses for neuromorphic computing. The main scaling bottleneck is poor temporal and spatial uniformity of artificial synapses. To the best of the author's knowledge, crystalline RRAM reported in …
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Novel Non Precharging Single Bitline 8T Static Random Access Memory
Novel 8T SRAM design, employs individual bit-line (BL) and word-line (WL) for each operation. The read operation uses read word-line (RWL) and read bit-line (RBL) respectively. On other hand the write operation employs write word-line (WWL) and write bit line (WBL). Due to single BL and WL the …
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Fabrication and Characterization of HfO2 Based Resistive Random Access Memory Devices
Current technology is dependent on the usage of a memory hierarchy. Primary components include SRAM, DRAM, and Flash. The ordering of these components in the memory hierarchy is dictated by both the cost and the performance of the components. These devices all share two distinct problems in that …
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IMPROVING THE HAFNIA-BASED RESISTIVE RANDOM-ACCESS MEMORY THROUGH MATERAL ENGINEERING
RESISTIVE RANDOM-ACCESS MEMORIES (RRAMS) ARE EXTENSIVELY INVESTIGATED AS A REPLACEMENT FOR FLASH MEMORIES DUE TO ITS SUPERIOR CHARACTERISTICS: HIGHER SPEED, BETTER ENDURANCE, MORE SCALABLE DESIGN AND SIMPLER FABRICATION PROCESSES. HOWEVER, DUE TO THE STOCHASTIC NATURE OF SUCH RESISTIVE SWITCHING, A …
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Magnetoresistive Random Access Memory (MRAM) technology : current advancement and future development
… one of the key utilities in modern computer. The memory industry grows as demand for denser, smaller, cheaper and faster memory device increases. The term memory has been used widely in computing jargon to refer to random access memory (RAM). RAMs are built with steady improvement over the years …
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Chemically modified Ta₂O₅ thin films for dynamic random access memory (DRAM) applications
… the fabrication of a reliable high-density memory device. In the present work, the effects of Al addition on Ta₂O₅ thin films were systematically studied. The structural and electrical properties of these chemically modified thin films were investigated in detail to establish their potential …
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Static random-access memory designs based on different FinFET at lower technology node (7nm)
The Static Random-Access Memory (SRAM) has a significant performance impact on current nanoelectronics systems. To improve SRAM efficiency, it is important to utilize emerging technologies to overcome short-channel effects (SCE) of conventional CMOS. FinFET devices are promising emerging devices …
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Nanoscale Nonvolatile Memory Circuit Design using Emerging Spin Transfer Torque Magnetic Random Access Memory
The spin transfer torque magnetic random access memory (STT-MRAM) is suitable for embedded and second level cache memories in the mobile CPUs. STT-MRAM is a highly potential nonvolatile memory (NVM) technology. There has been a growing demand to improve the efficiency and reliability of the NVM …
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Large-scale neuromorphic computing hardware for analog AI enabled by epitaxial random access memory
… those issues, this thesis presents epitaxial random access memory and relevant techniques at material-, device-, array-, architecture-, algorithm-level. The proposed methods have great potential to improve device performance and relax the large-scale system-level requirements for analog AI …
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Magnetic properties of lithographically patterned thin film magnetic elements for magnetic random access memory applications
… aim of assessing the behavior of future magnetic random access memory (MRAM) devices, the magnetic properties of the patterned elements, including magnetization switching mechanisms, switching field distribution, magnetic thermal stability, and magnetostatic interactions, have been studied using …
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Evaluation of the colossal electroresistance (CER) effect and its application in the non-volatile Resistive Random Access Memory (RRAM)
Flash memory, the current leading technology for non-volatile memory (NVM), is projected by many to run obsolete in the face of future miniaturization trend in the semiconductor devices due to some of its technical limitations. Several different technologies have been developed in attempt for …
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Design and fabrication of polycrystalline material thin-film transistors for active matrix liquid-crystal display and static random access memory applications
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1995.
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Impact of Thermal Effects and Other Material Properties on the Performance and Electro-Thermal Reliability of Resistive Random Access Memory Arrays
… with the floating gate MOSFET, alternative memory technologies like Resistive Random Access Memory (ReRAM) are gaining prominence in the scientific community. Boasting a straightforward device structure, ease of fabrication, and compatibility with CMOS (Complementary Metal-oxide …
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Present use and future needs of selected Virginia home computer owners
… who spent less on hardware and had less random access memory had higher levels of overall satisfaction than those who spent more on hardware and had more random access memory. Recommendations included methods of individualizing service and assistance for owners after the purchase.
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New ways to tune the multi-functionality of oxide thin films for memory applications
… to enhance their multi-functionality for various memory applications. First, electroforming-free resistive switching (RS) with high ON/OFF ratio is realized in a novel model VAN system based on self-assembled Sm-doped CeO2 and SrTiO3 films that allow separate tailoring of nano-scale ionic and …
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Formation and Rupture of Nanofilaments in Metal/TaOx/Metal Resistive Switches
… an increased interest in the Conductive Bridge Random Access Memory (CBRAM) and Resistive Random Access Memory (RRAM) because of their excellent scaling potential, low power consumption, high switching speed, good retention and endurance properties. Although, various mechanisms have been …
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An FPGA implementation of multicore, multithreaded powerPC processors with memory subsystem using Bluespec
… and integration of a multicore processor and a memory subsystem. The work is part of a joint project with IBM Watson research. The processors have multithreading capacities and implement the PowerPC ISA. The memory system consists of a parameterizable hierarchy of caches and random access memory …
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