Magnetic properties of lithographically patterned thin film magnetic elements for magnetic random access memory applications

Interference lithography, together with ion beam etching or lift-off processes, has been utilized to produce large area periodic rectangular patterns. Single layer Co, NiFe, and multilayer Co/Cu/NiFe pseudo spin valve films have been patterned into series of element arrays with different sizes. With the aim of assessing the behavior of future magnetic random access memory (MRAM) devices, the magnetic properties of the patterned elements, including magnetization switching mechanisms, switching field distribution, magnetic thermal stability, and magnetostatic interactions, have been studied using magnetic force microscopy (MFM), SQUID magnetometer, alternating gradient magnetometer (AGM) and vibrating sample magnetometer (VSM). The measured results have been compared with the theoretical shape anisotropy theory to try finding a guideline for controlling magnetic properties of patterned elements.

Department dc:contributor.department

Massachusetts Institute of Technology. Dept. of Materials Science and Engineering.

Grantor dc:publisher

Massachusetts Institute of Technology

Year dc:date.issued

2003

Author dc:creator

• Hao, Yaowu, 1969-

Advisor dc:contributor.advisor

• Caroline A. Ross.

• Materials Science and Engineering.

Statement dc:rights

• M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.

Licence dc:rights.uri

• http://dspace.mit.edu/handle/1721.1/7582

Language dc:language.iso

eng

Handle dc:identifier.uri

http://hdl.handle.net/1721.1/29970

OAI identifier oai:identifier

oai:dspace.mit.edu:1721.1/29970