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Showing 1 to 20 of 70 for “"InGaN"”.
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Optische Eigenschaften von Exzitonen in InGaN-Quantenstrukturen
… der optischen Eigenschaften von Exzitonen in InGaN-Quantenpunkt-Strukturen. An den InGaN-Proben konnten auflösungsbeschränkte Emissionslinien aus einzelnen Quantenpunkten nachgewiesen und ihr zeitliches Verhalten untersucht werden. Die Quantenpunkt-Linien zeigen ein mono-exponentielles …
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Remote Epitaxy by In-Situ Grown BN and InGaN Strain Relaxation
… the high indium content indium gallium nitride (InGaN) and the GaN substrate impedes the efficiency of the InGaN based red micro-LED. In the last part, relaxed high indium content InGaN film grown on BN is demonstrated. The as-grown film shows a 70 percent relaxation, 28 percent indium content …
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Crecimiento, fabricación y caracterización de diodos electroluminiscentes basados en pozos cuánticos de InGaN
… del gap de los binarios que forman el temario InGaN (GaN, 3.4 eV; InN, 0.9 eV), es fácil ver que con este material se puede abarcar todo el espectro visible. El objetivo de esta Tesis es estudiar el crecimiento por MBE y las propiedades del InGaN, con la finalidad de fabricar un diodo …
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Einfluss der Lumineszenzmechanismen und der elektrischen Kontakte auf die Effizienz von InGaN Leuchtdioden
… der als aktiven Bereich verwendeten InGaN-Quantenfilme. Ersterer bestimmt sowohl die für das Einprägen eines bestimmten Injektionsstroms erforderliche Spannung als auch durch seine optischen Eigenschaften die Effizienz der Lichtauskopplung aus der Leuchtdiode. Zur Realisierung von …
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Study of Thin GaN/InGaN/GaN double graded structures for Future photovoltaic application
<p>Indium gallium nitride (In_x Ga_(1-x) N) materials have displayed great potential for photovoltaic and optoelectronic devices due to their optical and electrical properties. Properties such as direct bandgap, strong bandgap absorption, thermal stability and high radiation resistance qualify them …
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Impact of Electrical Contacting Scheme on Performance of InGaN/GaN Schottky Solar Cells
… of the electrical contacting scheme employed in InGaN/GaN Schottky barrier solar cells on their performance. InGaN is a III-V compound semiconductor and has a tunable direct band-gap (0.7 eV to 3.4 eV) which spans most of the solar spectrum; this fact, along with other beneficial material …
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Investigation of carrier dynamics in InN, InGaN, and GaAsBi by optical pump-probe techniques /
… to investigation of carrier dynamics in InN, InGaN, and GaAsBi heterostructures by using light-induced transient gratings and differential transmission techniques. The experimental studies in a wide range of excess carrier densities and temperatures revealed that trap-assisted Auger …
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The Effect of Polarization and InGaN Quantum Well Shape in Multiple Quantum Well Light Emitting Diode Heterostructures
<p>Previous research in InGaN/GaN light emitting diodes (LEDs) employing semi-classical drift-diffusion models has used reduced polarization constants without much physical explanantion. This paper investigates possible physical explanations for this effective polarization reduction in InGaN LEDs …
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Ultravioletinės srities šviesos diodų žemadažnio triukšmo tyrimas /
… fluctuations and apply correlation method for InGaN-based LEDs. Two AlGaN-based LEDs (275 nm) and two InGaN-based LEDs (370 and 385 nm) were investigated. All investigated LEDs exhibited 1/f^α electrical and optical fluctuations while electrical generation-recombination noise with …
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H-BN integration in III-nitride devices for green hydrogen applications
… PEC water splitting. The focus is on integrating InGaN (Indium Gallium Nitride), GaN (Gallium Nitride), and h-BN (hexagonal Boron Nitride), which are promising materials for hydrogen production and storage applications thanks to their unique properties. InGaN, for example, offers a tunable band …
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Development of Nanostructured Light Emitters in Gallium Nitride
… structures is explored, and the integration of InGaN QWs with porous distributed Bragg reflectors (DBRs) is reported, with a corresponding increase in LED efficiency owing to improved light extraction. Porous DBRs are also integrated with InGaN QDs to create prototype optical cavity structures, …
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Microscopy of porous nitride materials for long wavelength light emitting diodes
… issues that persist in long-wavelength InGaN micro-LEDs, a porosified InGaN superlattice (SL) template obtained by electrochemical etching has been adopted as a pseudo-substrate for the overgrowth of InGaN multiple quantum wells (MQWs). Partial strain relaxation with respect to the GaN …
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The Effect of Growth Method on GaN Films and Their Interfaces with CdTe and CdS
… has analyzed the complex interfaces of GaN and InGaN grown by sputter deposition and GaN grown by metal-organic chemical vapor deposition (MOCVD) with CdTe and CdS. First, the GaN and InGaN films were characterized by AFM and XRD, and it has been shown that the MOCVD samples have a very smooth …
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A study of the elastic and electronic properties of III-nitride semiconductors
… between nanoscopic and atomistic features of InGaN quantum wells, which was beyond the reach of previous ab-initio or continuum studies. The analysis is performed for excited states as well as ground states for InGaN quantum wells of varying indium content and growth direction. The …
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Growth and Behaviors of InN/GaN Multiple Quantum Wells by Plasma-Assisted Molecular Beam Epitaxy
<p>Fully realizing the potential of InGaN semiconductors requires high quality materials with arbitrary In-content. To this date the growth of In-rich InGaN films is still challenging since it suffers from the low growth temperatures and many detrimental alloying problems. InN/GaN multiple quantum …
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OPTICAL CHARACTERIZATION OF WIDE ENERGY AGP GROUP III-NITRIDE SEMICONDUCTORS
… undoped GaN and n-type GaN thin films as well as InGaN alloys of low indium compositions grown on (1000)-plane sapphire substrates. Free exciton transitions, bound exciton transitions and longitudinal optical (LO) phonon-assisted exciton transitions were observed in undoped GaN samples. By …
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Nanoscale optoelectronic properties in traditional and emerging materials for light-emitting diodes
Although InGaN/GaN-based quantum well (QW) heterostructures continue to set the industry standard for inorganic blue and green light emitting diodes (LEDs), these devices suffer from efficiency droop at high current densities and material quality degradation at longer emission wavelengths. …
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Efficiency droop mitigation and quantum efficiency enhancement for nitride Light-Emitting Diodes
… lighting and high speed high power devices. InGaN-based LEDs have been widely used for all types of displays in TVs, computers, cell phones, etc. More and more high power LEDs have also been introduced in general lighting market. Once widely used, such LEDs could lead to the decrease of …
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Design and fabrication of nitride-based solar cells and integration for tandem cell
… This thesis work demonstrates unprecedented InGaN-based solar cells on 2-inch h-BN/sapphire wafer and their transfer to glass with a backside reflector. III-N solar cells with various sizes and designs are processed and characterized on a full 2-inch wafer giving performances comparable to …
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Low Dislocation Density Gallium Nitride Templates and Their Device Applications
… the strain related issue. The attempt to use InGaN as the 2DEG channel has also been successfully implemented. A Hall mobility (1230 cm2/Vs) was achieved in a 12 nm InGaN channel HFET with AlInGaN barrier, which demonstrates the viability of InGaN channel HFETs.
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