Nanoscale optoelectronic properties in traditional and emerging materials for light-emitting diodes

Although InGaN/GaN-based quantum well (QW) heterostructures continue to set the industry standard for inorganic blue and green light emitting diodes (LEDs), these devices suffer from efficiency droop at high current densities and material quality degradation at longer emission wavelengths. Establishing rational process design principles to address such issues remains inhibited by ongoing controversy surrounding the impact of commonly observed defects such as well-width fluctuations or V-pit defects on carrier recombination. Organic-inorganic perovskites have begun to attract attention as a potential next-generation LED material, but these nascent materials suffer from rapid material degradation under device operating conditions. Understanding structure-property correlations will be necessary to improve incumbent InGaN/GaN technologies and evaluate the potential of organic-inorganic perovskites.

Name thesis:degree_name

Doctoral

Department dc:contributor.department

Massachusetts Institute of Technology. Department of Materials Science and Engineering

Grantor dc:publisher

Massachusetts Institute of Technology

Year dc:date.issued

2019

Author dc:creator

• Zhao, Zhibo,Ph. D.Massachusetts Institute of Technology.

Advisor dc:contributor.advisor

• Silvija Gradečak.

• Materials Science and Engineering.

Statement dc:rights

• MIT theses are protected by copyright. They may be viewed, downloaded, or printed from this source but further reproduction or distribution in any format is prohibited without written permission.

Licence dc:rights.uri

• http://dspace.mit.edu/handle/1721.1/7582

Language dc:language.iso

eng

Handle dc:identifier.uri

https://hdl.handle.net/1721.1/121609

OAI identifier oai:identifier

oai:dspace.mit.edu:1721.1/121609