Numerical studies of femtosecond laser spectroscopy experiments in gallium arsenide material and quantum well structures

In this thesis the methods and results of numerical simulations of femtosecond laser spectroscopy experiments in Al$\sb{x}$Ga$\sb{1-x}$As quantum well structures and bulk GaAs are presented. Photoexcited carriers are modeled by an ensemble Monte Carlo method including hole bandstructure effects. The time-dependent distributions from the Monte Carlo simulations in turn serve as a basis for interpreting transient differential transmission data, leading to an understanding of relaxation processes and the determination of material parameters in Al$\sb{x}$Ga$\sb{1-x}$As quantum wells and GaAs.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Engineering, Electronics and Electrical

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Bailey, Daniel William

Contributors dc:contributor

• Hess, Karl

• Engineering, Electronics and Electrical

Statement dc:rights

• Copyright 1990 Bailey, Daniel William

Language dc:language

eng

Identifier

AAI9026130
(UMI)AAI9026130

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/23674