Numerical studies of femtosecond laser spectroscopy experiments in gallium arsenide material and quantum well structures
In this thesis the methods and results of numerical simulations of femtosecond laser spectroscopy experiments in Al$\sb{x}$Ga$\sb{1-x}$As quantum well structures and bulk GaAs are presented. Photoexcited carriers are modeled by an ensemble Monte Carlo method including hole bandstructure effects. The time-dependent distributions from the Monte Carlo simulations in turn serve as a basis for interpreting transient differential transmission data, leading to an understanding of relaxation processes and the determination of material parameters in Al$\sb{x}$Ga$\sb{1-x}$As quantum wells and GaAs.
University of Illinois - Urbana-Champaign
Networked Digital Library of Theses and Dissertations
University of Illinois at Urbana-Champaign