Numerical studies of femtosecond laser spectroscopy experiments in gallium arsenide material and quantum well structures
type: CreativeWork
description: In this thesis the methods and results of numerical simulations of femtosecond laser spectroscopy experiments in Al$\sb{x}$Ga$\sb{1-x}$As quantum well structures and bulk GaAs are presented. Photoexcited carriers are modeled by an ensemble Monte Carlo method including hole bandstructure effects. The time-dependent distributions from the Monte Carlo simulations in turn serve as a basis for interpreting transient differential transmission data, leading to an understanding of relaxation processes and the determination of material parameters in Al$\sb{x}$Ga$\sb{1-x}$As quantum wells and GaAs.
abstract: In this thesis the methods and results of numerical simulations of femtosecond laser spectroscopy experiments in Al$\sb{x}$Ga$\sb{1-x}$As quantum well structures and bulk GaAs are presented. Photoexcited carriers are modeled by an ensemble Monte Carlo method including hole bandstructure effects. The time-dependent distributions from the Monte Carlo simulations in turn serve as a basis for interpreting transient differential transmission data, leading to an understanding of relaxation processes and the determination of material parameters in Al$\sb{x}$Ga$\sb{1-x}$As quantum wells and GaAs.
author: Bailey, Daniel William
language: eng
keywords: Engineering, Electronics and Electrical
date published: 2011-05-07T14:22:51Z
date modified: 2026-07-22T22:25:22Z
provider: University of Illinois - Urbana-Champaign
publisher: Networked Digital Library of Theses and Dissertations
type: WebPage
source organization: University of Illinois at Urbana-Champaign

PropertyValue
property ID: Handle
value: http://hdl.handle.net/2142/23674