{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/23674"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/23674","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Numerical studies of femtosecond laser spectroscopy experiments in gallium arsenide material and quantum well structures","abstract":"In this thesis the methods and results of numerical simulations of femtosecond laser spectroscopy experiments in Al$\\sb{x}$Ga$\\sb{1-x}$As quantum well structures and bulk GaAs are presented. Photoexcited carriers are modeled by an ensemble Monte Carlo method including hole bandstructure effects. The time-dependent distributions from the Monte Carlo simulations in turn serve as a basis for interpreting transient differential transmission data, leading to an understanding of relaxation processes and the determination of material parameters in Al$\\sb{x}$Ga$\\sb{1-x}$As quantum wells and GaAs.","abstract_html":"In this thesis the methods and results of numerical simulations of femtosecond laser spectroscopy experiments in Al$\\sb{x}$Ga$\\sb{1-x}$As quantum well structures and bulk GaAs are presented. Photoexcited carriers are modeled by an ensemble Monte Carlo method including hole bandstructure effects. The time-dependent distributions from the Monte Carlo simulations in turn serve as a basis for interpreting transient differential transmission data, leading to an understanding of relaxation processes and the determination of material parameters in Al$\\sb{x}$Ga$\\sb{1-x}$As quantum wells and GaAs.","abstract_has_math":true,"creators":["Bailey, Daniel William"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Engineering, Electronics and Electrical","degree_department":null,"school":null,"contributors":["Hess, Karl"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-05-07T14:22:51Z","date_published":"2011-05-07T14:22:51Z","updated_at":"2026-07-22T22:25:22Z","subjects":["Engineering, Electronics and Electrical"],"languages":["eng"],"rights":["Copyright 1990 Bailey, Daniel William"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9026130","(UMI)AAI9026130"],"render_values":[{"text":"AAI9026130","href":null,"code":true},{"text":"(UMI)AAI9026130","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/23674","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Hess, Karl"]},{"key":"dc:creator","label":"Author","values":["Bailey, Daniel William"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-05-07T14:22:51Z","10000-01-01","1990"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Engineering, Electronics and Electrical"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 1990 Bailey, Daniel William"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9026130","(UMI)AAI9026130","http://hdl.handle.net/2142/23674"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["In this thesis the methods and results of numerical simulations of femtosecond laser spectroscopy experiments in Al$\\sb{x}$Ga$\\sb{1-x}$As quantum well structures and bulk GaAs are presented. Photoexcited carriers are modeled by an ensemble Monte Carlo method including hole bandstructure effects. The time-dependent distributions from the Monte Carlo simulations in turn serve as a basis for interpreting transient differential transmission data, leading to an understanding of relaxation processes and the determination of material parameters in Al$\\sb{x}$Ga$\\sb{1-x}$As quantum wells and GaAs.","In Chap. 2 the Al$\\sb{x}$Ga$\\sb{1-x}$As quantum well system is examined by electron ensemble Monte Carlo simulations of 2-eV and near-band edge laser spectroscopy experiments. Results are contrasted, where appropriate, with comparable simulations in bulk GaAs. Simulations show that, unlike bulk experiments, the effects of polar optical phonon scattering are obscured in Al$\\sb{x}$Ga$\\sb{1-x}$As quantum well measurements because of coupling between hole subbands. Three scattering mechanisms are investigated and discussed: electron-electron, polar optical phonon, and (intervalley) optical deformation potential.","Femtosecond laser spectroscopy experiments in bulk GaAs are studied in Chap. 3. Electron and hole dynamics are modeled simultaneously. The time-dependent distribution functions from the ensemble Monte Carlo simulation are used to obtain the differential transmission directly, thus avoiding problems imposed by extracting time constants from the experimental spectra. By matching experimental results and artificially varying the strength of scattering mechanisms, dominant and sensitive relaxation mechanisms are clearly identified.","These simulations show that for 2-eV femtosecond laser spectroscopy measurements in GaAs at room temperature, for electrons the intervalley scattering rate is the most critical parameter determining the width of the initial transient transmission peak, and that the best fit with experimental results occurs for $D\\sb{o}$ = 5 $\\times$ 10$\\sp8$ eV/cm. Equally important in the analysis, however, is the effect of holes on the differential transmission. It is also shown that carrier-carrier scattering plays a much less important role.","Made available in DSpace on 2011-05-07T14:22:51Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9026130.pdf: 2914694 bytes, checksum: f682a50bfd97ee0d3628a6b05fc9f8bd (MD5) Previous issue date: 1990","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T15:06:04Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:31:42-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"]},{"key":"dc:title","label":"Title","values":["Numerical studies of femtosecond laser spectroscopy experiments in gallium arsenide material and quantum well structures"]}]}],"canonical_facts":{"dc:contributor":["Hess, Karl"],"dc:creator":["Bailey, Daniel William"],"dc:date":["2011-05-07T14:22:51Z","10000-01-01","1990"],"dc:description":["In this thesis the methods and results of numerical simulations of femtosecond laser spectroscopy experiments in Al$\\sb{x}$Ga$\\sb{1-x}$As quantum well structures and bulk GaAs are presented. Photoexcited carriers are modeled by an ensemble Monte Carlo method including hole bandstructure effects. The time-dependent distributions from the Monte Carlo simulations in turn serve as a basis for interpreting transient differential transmission data, leading to an understanding of relaxation processes and the determination of material parameters in Al$\\sb{x}$Ga$\\sb{1-x}$As quantum wells and GaAs.","In Chap. 2 the Al$\\sb{x}$Ga$\\sb{1-x}$As quantum well system is examined by electron ensemble Monte Carlo simulations of 2-eV and near-band edge laser spectroscopy experiments. Results are contrasted, where appropriate, with comparable simulations in bulk GaAs. Simulations show that, unlike bulk experiments, the effects of polar optical phonon scattering are obscured in Al$\\sb{x}$Ga$\\sb{1-x}$As quantum well measurements because of coupling between hole subbands. Three scattering mechanisms are investigated and discussed: electron-electron, polar optical phonon, and (intervalley) optical deformation potential.","Femtosecond laser spectroscopy experiments in bulk GaAs are studied in Chap. 3. Electron and hole dynamics are modeled simultaneously. The time-dependent distribution functions from the ensemble Monte Carlo simulation are used to obtain the differential transmission directly, thus avoiding problems imposed by extracting time constants from the experimental spectra. By matching experimental results and artificially varying the strength of scattering mechanisms, dominant and sensitive relaxation mechanisms are clearly identified.","These simulations show that for 2-eV femtosecond laser spectroscopy measurements in GaAs at room temperature, for electrons the intervalley scattering rate is the most critical parameter determining the width of the initial transient transmission peak, and that the best fit with experimental results occurs for $D\\sb{o}$ = 5 $\\times$ 10$\\sp8$ eV/cm. Equally important in the analysis, however, is the effect of holes on the differential transmission. It is also shown that carrier-carrier scattering plays a much less important role.","Made available in DSpace on 2011-05-07T14:22:51Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9026130.pdf: 2914694 bytes, checksum: f682a50bfd97ee0d3628a6b05fc9f8bd (MD5) Previous issue date: 1990","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T15:06:04Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:31:42-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"],"dc:identifier":["AAI9026130","(UMI)AAI9026130","http://hdl.handle.net/2142/23674"],"dc:language":["eng"],"dc:rights":["Copyright 1990 Bailey, Daniel William"],"dc:subject":["Engineering, Electronics and Electrical"],"dc:title":["Numerical studies of femtosecond laser spectroscopy experiments in gallium arsenide material and quantum well structures"],"dc:type":["text"],"thesis:degree_discipline":["Engineering, Electronics and Electrical"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:22Z"}