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University of Illinois at Urbana-Champaign
Development of metalorganic molecular beam epitaxy for the growth of indium(0.53) gallium(0.47) arsenic/indium phosphide heterojunction bipolar transistors and quantum well optoelectronic devices
Abstract
dc:descriptionItem marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:54:45Z Item is restricted indefinitely.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Electrical Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2011
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Jackson, Steven Lee
- Contributors dc:contributor
-
- Stillman, Gregory E.
Subjects
dc:subject × 1Rights
dc:rights- Statement dc:rights
-
- Copyright 1994 Jackson, Steven Lee
- Language dc:language
- eng
Identifiers
dc:identifier.*- Identifier
-
AAI9512414
(UMI)AAI9512414 - OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/22017