{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/22017"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/22017","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Development of metalorganic molecular beam epitaxy for the growth of indium(0.53) gallium(0.47) arsenic/indium phosphide heterojunction bipolar transistors and quantum well optoelectronic devices","abstract":"Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:54:45Z Item is restricted indefinitely.","abstract_html":"Item marked as restricted to the &#x27;UIUC Users [automated]&#x27; Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:54:45Z Item is restricted indefinitely.","abstract_has_math":false,"creators":["Jackson, Steven Lee"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":["Stillman, Gregory E."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-05-07T13:26:18Z","date_published":"2011-05-07T13:26:18Z","updated_at":"2026-07-22T22:25:19Z","subjects":["Engineering, Electronics and Electrical"],"languages":["eng"],"rights":["Copyright 1994 Jackson, Steven Lee"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9512414","(UMI)AAI9512414"],"render_values":[{"text":"AAI9512414","href":null,"code":true},{"text":"(UMI)AAI9512414","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/22017","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Stillman, Gregory E."]},{"key":"dc:creator","label":"Author","values":["Jackson, Steven Lee"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-05-07T13:26:18Z","10000-01-01","1994"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 1994 Jackson, Steven Lee"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9512414","(UMI)AAI9512414","http://hdl.handle.net/2142/22017"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:54:45Z Item is restricted indefinitely.","Metalorganic molecular beam epitaxy (MOMBE) offers several potential advantages over molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) for the development of high-speed/reliability C-doped In$\\rm\\sb{0.53}Ga\\sb{0.47}$As/InP heterojunction bipolar transistors (HBTs). Improvements in reproducibility of alloy composition and layer thickness for $\\rm In\\sb xGa\\sb{1-x}As$ and InP, which are afforded by MOMBE relative to MBE, offer clear advantages for manufacturing. The potential for reduction of the H passivation of C acceptors and substrate temperature sensitivity of the alloy composition, using CCl$\\sb4$ as the C source, offers advantages relative to MOCVD. However, the lack of an efficient gaseous n-type dopant source limits the potential for scalability of MOMBE. This thesis describes recent work on the development of MOMBE for the growth of C-doped $\\rm In\\sb{0.53}Ga\\sb{0.47}As/InP$ HBTs. Issues relevant to obtaining abrupt heterointerfaces, the development of a new gaseous Si dopant source, SiBr$\\sb4$, and the sources of H passivation of C acceptors in C-doped $\\rm In\\sb{0.53}Ga\\sb{0.47}As$ have been investigated.","The use of a common Ta-baffled hydride cracker for the dissociation of AsH$\\sb3$ and PH$\\sb3$ at 950$\\sp\\circ$C was found to result in the generation of As$\\sb2$, P$\\sb2$, and H$\\sb2$. However, severe group V memory effects were observed for P and As. Significantly faster switching was obtained, by using separate open Ta tube crackers. Single and multiple quantum well $\\rm In\\sb{0.53}Ga\\sb{0.47}As/InP$ heterostructures containing quantum wells as narrow as 10 A exhibit intense photoluminescence and ninth order satellite peaks in resolution x-ray diffraction rocking curves.","SiBr$\\sb4$ has been demonstrated as an extremely efficient gaseous Si doping source which is compatible with MOMBE. Net electron concentrations of n = $\\rm2.3\\times10\\sp{20}\\ cm\\sp{-3}$ have been obtained in InP grown at 450$\\sp\\circ$C without morphology degradation. Specific contact resistances of $\\rm\\rho\\sb c=6\\times10\\sp{-8}\\ \\Omega$-cm$\\sp{2}$ have been obtained by using nonalloyed Ti/Pt/Au contacts directly to these heavily-doped InP layers. $\\rm In\\sb{0.53}Ga\\sb{0.47}As/InP$ HBTs using InP contact layers with comparably low specific contact resistances have been demonstrated. A blue shift in the photoluminescence peak energy of approximately 265 meV is observed for InP layers doped to n = $\\rm7\\times10\\sp{19}\\ cm\\sp{-3}.$","Carbon doping of $\\rm In\\sb{0.53}Ga\\sb{0.47}As$ in gas source molecular beam epitaxy and MOMBE using CCl$\\sb4$ has been investigated. Net hole concentrations of p = $\\rm1.8\\times10\\sp{20}\\ cm\\sp{-3}$ have been obtained with negligible H passivation for hole concentrations as high as p = $\\rm8\\times10\\sp{19}\\ cm\\sp{-3}$. The degree of H passivation was found to be highly dependent on the AsH$\\sb3$ cracking temperature with an enhanced effect at substrate temperatures ${<5}00\\sp\\circ$C and for reduced H$\\sb2$ pumping speed.","Made available in DSpace on 2011-05-07T13:26:18Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9512414.pdf: 4658964 bytes, checksum: b2947364dfc48355c9be7321ef3a5020 (MD5) Previous issue date: 1994","Restriction data tranferred 2014-07-01T11:25:29-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"]},{"key":"dc:title","label":"Title","values":["Development of metalorganic molecular beam epitaxy for the growth of indium(0.53) gallium(0.47) arsenic/indium phosphide heterojunction bipolar transistors and quantum well optoelectronic devices"]}]}],"canonical_facts":{"dc:contributor":["Stillman, Gregory E."],"dc:creator":["Jackson, Steven Lee"],"dc:date":["2011-05-07T13:26:18Z","10000-01-01","1994"],"dc:description":["Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:54:45Z Item is restricted indefinitely.","Metalorganic molecular beam epitaxy (MOMBE) offers several potential advantages over molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) for the development of high-speed/reliability C-doped In$\\rm\\sb{0.53}Ga\\sb{0.47}$As/InP heterojunction bipolar transistors (HBTs). Improvements in reproducibility of alloy composition and layer thickness for $\\rm In\\sb xGa\\sb{1-x}As$ and InP, which are afforded by MOMBE relative to MBE, offer clear advantages for manufacturing. The potential for reduction of the H passivation of C acceptors and substrate temperature sensitivity of the alloy composition, using CCl$\\sb4$ as the C source, offers advantages relative to MOCVD. However, the lack of an efficient gaseous n-type dopant source limits the potential for scalability of MOMBE. This thesis describes recent work on the development of MOMBE for the growth of C-doped $\\rm In\\sb{0.53}Ga\\sb{0.47}As/InP$ HBTs. Issues relevant to obtaining abrupt heterointerfaces, the development of a new gaseous Si dopant source, SiBr$\\sb4$, and the sources of H passivation of C acceptors in C-doped $\\rm In\\sb{0.53}Ga\\sb{0.47}As$ have been investigated.","The use of a common Ta-baffled hydride cracker for the dissociation of AsH$\\sb3$ and PH$\\sb3$ at 950$\\sp\\circ$C was found to result in the generation of As$\\sb2$, P$\\sb2$, and H$\\sb2$. However, severe group V memory effects were observed for P and As. Significantly faster switching was obtained, by using separate open Ta tube crackers. Single and multiple quantum well $\\rm In\\sb{0.53}Ga\\sb{0.47}As/InP$ heterostructures containing quantum wells as narrow as 10 A exhibit intense photoluminescence and ninth order satellite peaks in resolution x-ray diffraction rocking curves.","SiBr$\\sb4$ has been demonstrated as an extremely efficient gaseous Si doping source which is compatible with MOMBE. Net electron concentrations of n = $\\rm2.3\\times10\\sp{20}\\ cm\\sp{-3}$ have been obtained in InP grown at 450$\\sp\\circ$C without morphology degradation. Specific contact resistances of $\\rm\\rho\\sb c=6\\times10\\sp{-8}\\ \\Omega$-cm$\\sp{2}$ have been obtained by using nonalloyed Ti/Pt/Au contacts directly to these heavily-doped InP layers. $\\rm In\\sb{0.53}Ga\\sb{0.47}As/InP$ HBTs using InP contact layers with comparably low specific contact resistances have been demonstrated. A blue shift in the photoluminescence peak energy of approximately 265 meV is observed for InP layers doped to n = $\\rm7\\times10\\sp{19}\\ cm\\sp{-3}.$","Carbon doping of $\\rm In\\sb{0.53}Ga\\sb{0.47}As$ in gas source molecular beam epitaxy and MOMBE using CCl$\\sb4$ has been investigated. Net hole concentrations of p = $\\rm1.8\\times10\\sp{20}\\ cm\\sp{-3}$ have been obtained with negligible H passivation for hole concentrations as high as p = $\\rm8\\times10\\sp{19}\\ cm\\sp{-3}$. The degree of H passivation was found to be highly dependent on the AsH$\\sb3$ cracking temperature with an enhanced effect at substrate temperatures ${<5}00\\sp\\circ$C and for reduced H$\\sb2$ pumping speed.","Made available in DSpace on 2011-05-07T13:26:18Z (GMT). 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