Development of metalorganic molecular beam epitaxy for the growth of indium(0.53) gallium(0.47) arsenic/indium phosphide heterojunction bipolar transistors and quantum well optoelectronic devices
type: CreativeWork
description: Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:54:45Z Item is restricted indefinitely.
abstract: Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:54:45Z Item is restricted indefinitely.
author: Jackson, Steven Lee
language: eng
keywords: Engineering, Electronics and Electrical
date published: 2011-05-07T13:26:18Z
date modified: 2026-07-22T22:25:19Z
provider: University of Illinois - Urbana-Champaign
publisher: Networked Digital Library of Theses and Dissertations
type: WebPage
source organization: University of Illinois at Urbana-Champaign

PropertyValue
property ID: Handle
value: http://hdl.handle.net/2142/22017