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Universität Oldenburg
Thermally stimulated currents and photoconductivity in microcrystalline silicon
Abstract
dc:description.abstractThis thesis focuses on the characterization of microcrystalline silicon ( c-Si:H) samples by numerically simulated and experimental thermally stimulated currents (TSC). TSC measurements and simulations demonstrate in detail two different retrapping regimes (strong and weak). A combined experiment - simulation approach allows to extract the density-of-states profile and to deduce trap parameters. For ñc-Si:H samples, the conduction band tail parameters vary between 20 meV and 24 meV. Deeper in the gap, a broad defect distribution is obtained. The capture coefficient varies between 1 10-9 cm3 s-1 and 3 10-9 cm3 s-1.
Degree
thesis:*- Level thesis:degree_level
- thesis.doctoral
- Grantor dc:publisher
- Universität Oldenburg
- Year
- 2007
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Souffi, Nacera
Subjects
dc:subject × 1Identifiers
dc:identifier.*- Repository record source_url
- http://oops.uni-oldenburg.de/49
- OAI identifier oai:identifier
- oai:oops.uni-oldenburg.de:49