{"id":{"repo_id":"oldenburg","oai_identifier":"oai:oops.uni-oldenburg.de:49"},"canonical_url":"https://search.dev.ndltd.org/etd/oldenburg/oai:oops.uni-oldenburg.de:49","repository":{"repo_id":"oldenburg","name":"Carl von Ossietzky Universität Oldenburg","base_url":"http://oops.uni-oldenburg.de/cgi/oai2"},"display":{"title":"Thermally stimulated currents and photoconductivity in microcrystalline silicon","abstract":"This thesis focuses on the characterization of microcrystalline silicon ( c-Si:H) samples by numerically simulated and experimental thermally stimulated currents (TSC). TSC measurements and simulations demonstrate in detail two different retrapping regimes (strong and weak). A combined experiment - simulation approach allows to extract the density-of-states profile and to deduce trap parameters. For ñc-Si:H samples, the conduction band tail parameters vary between 20 meV and 24 meV. Deeper in the gap, a broad defect distribution is obtained. The capture coefficient varies between 1 10-9 cm3 s-1 and 3 10-9 cm3 s-1.","abstract_html":"This thesis focuses on the characterization of microcrystalline silicon ( c-Si:H) samples by numerically simulated and experimental thermally stimulated currents (TSC). TSC measurements and simulations demonstrate in detail two different retrapping regimes (strong and weak). A combined experiment - simulation approach allows to extract the density-of-states profile and to deduce trap parameters. For ñc-Si:H samples, the conduction band tail parameters vary between 20 meV and 24 meV. Deeper in the gap, a broad defect distribution is obtained. The capture coefficient varies between 1 10-9 cm3 s-1 and 3 10-9 cm3 s-1.","abstract_has_math":false,"creators":["Souffi, Nacera"],"institution":"Universität Oldenburg","degree_name":null,"degree_level":"thesis.doctoral","degree_discipline":null,"degree_department":null,"school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2007,"date_issued":"2007","date_published":"2007","updated_at":"2026-07-27T20:27:08Z","subjects":["[Keine Schlagwörter von Autor/in vergeben.]"],"languages":[],"rights":[],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://oops.uni-oldenburg.de/49","outbound_label":"Repository record","outbound_source":"source_url"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:creator","label":"Author","values":["Souffi, Nacera"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:publisher","label":"Institution","values":["BIS der Universität Oldenburg"]},{"key":"dc:type","label":"Dc Type","values":["doctoralThesis"]},{"key":"thesis:degree_level","label":"Degree Level","values":["thesis.doctoral"]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["Universität Oldenburg"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["[Keine Schlagwörter von Autor/in vergeben.]"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["This thesis focuses on the characterization of microcrystalline silicon ( c-Si:H) samples by numerically simulated and experimental thermally stimulated currents (TSC). TSC measurements and simulations demonstrate in detail two different retrapping regimes (strong and weak). A combined experiment - simulation approach allows to extract the density-of-states profile and to deduce trap parameters. For ñc-Si:H samples, the conduction band tail parameters vary between 20 meV and 24 meV. Deeper in the gap, a broad defect distribution is obtained. The capture coefficient varies between 1 10-9 cm3 s-1 and 3 10-9 cm3 s-1.","Diese Dissertation behandelt die Charakterisierung von mikrokristallinem Silizium (ñc-Si:H) durch numerisch simulierte und experimentell bestimmte thermisch stimulierte Ströme (TSC). TSC Messungen und Simulationen erlauben die detaillierte Demonstration von zwei verschiedenen Retrapping-Regimen (stark und schwach). Eine Kombination von Experiment und Simulation ermöglicht die Bestimmung des Zustandsdichte-Profils und der Trap-Parameter. Für Proben von ñc -Si:H liegt der Parameter des Leitungsbandausläufers im Bereich zwischen 20 meV und 24 meV. Tiefer in der Bandlücke wird eine breite Defektverteilung bestimmt. Der Einfangkoeffizient liegt zwischen 1 10-9 cm3 s-1 und 3 10-9 cm3 s-1."]},{"key":"dc:format.medium","label":"Dc Format Medium","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Thermally stimulated currents and photoconductivity in microcrystalline silicon"]}]}],"canonical_facts":{"dc:creator":["Souffi, Nacera"],"dc:description.abstract":["This thesis focuses on the characterization of microcrystalline silicon ( c-Si:H) samples by numerically simulated and experimental thermally stimulated currents (TSC). TSC measurements and simulations demonstrate in detail two different retrapping regimes (strong and weak). A combined experiment - simulation approach allows to extract the density-of-states profile and to deduce trap parameters. For ñc-Si:H samples, the conduction band tail parameters vary between 20 meV and 24 meV. Deeper in the gap, a broad defect distribution is obtained. The capture coefficient varies between 1 10-9 cm3 s-1 and 3 10-9 cm3 s-1.","Diese Dissertation behandelt die Charakterisierung von mikrokristallinem Silizium (ñc-Si:H) durch numerisch simulierte und experimentell bestimmte thermisch stimulierte Ströme (TSC). TSC Messungen und Simulationen erlauben die detaillierte Demonstration von zwei verschiedenen Retrapping-Regimen (stark und schwach). Eine Kombination von Experiment und Simulation ermöglicht die Bestimmung des Zustandsdichte-Profils und der Trap-Parameter. Für Proben von ñc -Si:H liegt der Parameter des Leitungsbandausläufers im Bereich zwischen 20 meV und 24 meV. Tiefer in der Bandlücke wird eine breite Defektverteilung bestimmt. Der Einfangkoeffizient liegt zwischen 1 10-9 cm3 s-1 und 3 10-9 cm3 s-1."],"dc:format.medium":["application/pdf"],"dc:publisher":["BIS der Universität Oldenburg"],"dc:subject":["[Keine Schlagwörter von Autor/in vergeben.]"],"dc:title":["Thermally stimulated currents and photoconductivity in microcrystalline silicon"],"dc:type":["doctoralThesis"],"thesis:degree_level":["thesis.doctoral"],"thesis:institution_name":["Universität Oldenburg"]},"updated_at":"2026-07-27T20:27:08Z"}