Growth and Characterization of Manganese Doped Galium Arsenide Thin Films

Devices which rely on spin for performing their functions form the foundation of a new field of electronics called spintronics. In the present work growth and characterization of manganese doped gallium arsenide thin films is discussed. An MBE system, subsequently a Hall Effect characterization system including an electromagnet was set up. GaAs films with various Ga to As ratios were grown at low temperature and high As ratios were used as the basis of growth for Mn doped GaAs thin films. Van der Pauw Hall Effect and resistivity measurements of these films were done for determining the electrical properties. These results demonstrate the expected behaviour of Mn in GaAs, and serve as an indication for future research directions.

Name thesis:degree_name

Master of Science in Materials Science

Level thesis:degree_level

Masters

Discipline thesis:degree_discipline

Physics, Astronomy, and Materials Science

Year

2002

Author dc:creator

• Aella, Pavan Reddy K.

Contributors dc:contributor

• James Broerman

• Materials Science and Engineering

Statement dc:rights

• © Pavan Reddy K. Aella

Repository record dc:identifier

https://bearworks.missouristate.edu/theses/841

OAI identifier oai:identifier

oai:bearworks.missouristate.edu:theses-1842