{"id":{"repo_id":"mo-state","oai_identifier":"oai:bearworks.missouristate.edu:theses-1842"},"canonical_url":"https://search.dev.ndltd.org/etd/mo-state/oai:bearworks.missouristate.edu:theses-1842","repository":{"repo_id":"mo-state","name":"Missouri State University","base_url":"https://bearworks.missouristate.edu/do/oai/"},"display":{"title":"Growth and Characterization of Manganese Doped Galium Arsenide Thin Films","abstract":"Devices which rely on spin for performing their functions form the foundation of a new field of electronics called spintronics. In the present work growth and characterization of manganese doped gallium arsenide thin films is discussed. An MBE system, subsequently a Hall Effect characterization system including an electromagnet was set up. GaAs films with various Ga to As ratios were grown at low temperature and high As ratios were used as the basis of growth for Mn doped GaAs thin films. Van der Pauw Hall Effect and resistivity measurements of these films were done for determining the electrical properties. These results demonstrate the expected behaviour of Mn in GaAs, and serve as an indication for future research directions.","abstract_html":"Devices which rely on spin for performing their functions form the foundation of a new field of electronics called spintronics. In the present work growth and characterization of manganese doped gallium arsenide thin films is discussed. An MBE system, subsequently a Hall Effect characterization system including an electromagnet was set up. GaAs films with various Ga to As ratios were grown at low temperature and high As ratios were used as the basis of growth for Mn doped GaAs thin films. Van der Pauw Hall Effect and resistivity measurements of these films were done for determining the electrical properties. These results demonstrate the expected behaviour of Mn in GaAs, and serve as an indication for future research directions.","abstract_has_math":false,"creators":["Aella, Pavan Reddy K."],"institution":null,"degree_name":"Master of Science in Materials Science","degree_level":"Masters","degree_discipline":"Physics, Astronomy, and Materials Science","degree_department":null,"school":null,"contributors":["James Broerman"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2002,"date_issued":"2002-07-01T07:00:00Z","date_published":"2002-07-01T07:00:00Z","updated_at":"2026-07-24T03:15:54Z","subjects":["Materials Science and Engineering"],"languages":[],"rights":["© Pavan Reddy K. Aella"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"https://bearworks.missouristate.edu/theses/841","outbound_label":"Repository record","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["James Broerman"]},{"key":"dc:creator","label":"Author","values":["Aella, Pavan Reddy K."]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"thesis:degree_discipline","label":"Discipline","values":["Physics, Astronomy, and Materials Science"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Masters"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Master of Science in Materials Science"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Materials Science and Engineering"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:rights","label":"Dc Rights","values":["© Pavan Reddy K. Aella"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["https://bearworks.missouristate.edu/theses/841"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["Devices which rely on spin for performing their functions form the foundation of a new field of electronics called spintronics. In the present work growth and characterization of manganese doped gallium arsenide thin films is discussed. An MBE system, subsequently a Hall Effect characterization system including an electromagnet was set up. GaAs films with various Ga to As ratios were grown at low temperature and high As ratios were used as the basis of growth for Mn doped GaAs thin films. Van der Pauw Hall Effect and resistivity measurements of these films were done for determining the electrical properties. These results demonstrate the expected behaviour of Mn in GaAs, and serve as an indication for future research directions."]},{"key":"dc:title","label":"Title","values":["Growth and Characterization of Manganese Doped Galium Arsenide Thin Films"]}]}],"canonical_facts":{"dc:contributor":["James Broerman"],"dc:creator":["Aella, Pavan Reddy K."],"dc:description.abstract":["Devices which rely on spin for performing their functions form the foundation of a new field of electronics called spintronics. In the present work growth and characterization of manganese doped gallium arsenide thin films is discussed. An MBE system, subsequently a Hall Effect characterization system including an electromagnet was set up. GaAs films with various Ga to As ratios were grown at low temperature and high As ratios were used as the basis of growth for Mn doped GaAs thin films. Van der Pauw Hall Effect and resistivity measurements of these films were done for determining the electrical properties. These results demonstrate the expected behaviour of Mn in GaAs, and serve as an indication for future research directions."],"dc:identifier":["https://bearworks.missouristate.edu/theses/841"],"dc:rights":["© Pavan Reddy K. Aella"],"dc:subject":["Materials Science and Engineering"],"dc:title":["Growth and Characterization of Manganese Doped Galium Arsenide Thin Films"],"thesis:degree_discipline":["Physics, Astronomy, and Materials Science"],"thesis:degree_level":["Masters"],"thesis:degree_name":["Master of Science in Materials Science"]},"updated_at":"2026-07-24T03:15:54Z"}