Growth and Characterization of Manganese Doped Galium Arsenide Thin Films
type: CreativeWork
description: Devices which rely on spin for performing their functions form the foundation of a new field of electronics called spintronics. In the present work growth and characterization of manganese doped gallium arsenide thin films is discussed. An MBE system, subsequently a Hall Effect characterization system including an electromagnet was set up. GaAs films with various Ga to As ratios were grown at low temperature and high As ratios were used as the basis of growth for Mn doped GaAs thin films. Van der Pauw Hall Effect and resistivity measurements of these films were done for determining the electrical properties. These results demonstrate the expected behaviour of Mn in GaAs, and serve as an indication for future research directions.
abstract: Devices which rely on spin for performing their functions form the foundation of a new field of electronics called spintronics. In the present work growth and characterization of manganese doped gallium arsenide thin films is discussed. An MBE system, subsequently a Hall Effect characterization system including an electromagnet was set up. GaAs films with various Ga to As ratios were grown at low temperature and high As ratios were used as the basis of growth for Mn doped GaAs thin films. Van der Pauw Hall Effect and resistivity measurements of these films were done for determining the electrical properties. These results demonstrate the expected behaviour of Mn in GaAs, and serve as an indication for future research directions.
author: Aella, Pavan Reddy K.
keywords: Materials Science and Engineering
date published: 2002-07-01T07:00:00Z
date modified: 2026-07-24T03:15:54Z
provider: Missouri State University
publisher: Networked Digital Library of Theses and Dissertations
type: WebPage
source organization: Missouri State University