Infrared absorption of neutron irradiated silicon

In this work the infrared absorption of neutron irradiated silicon was compared to that of non-irradiated silicon at room and liquid nitrogen temperatures. It was found that instead of the 1.75 micron absorption band that has been mentioned in numerous papers transmission was completely cut off below about 2.5 microns at room temperature and about 1.8 microns at liquid nitrogen temperature. A weak absorption band was noted at 4.4 microns for all three samples at liquid nitrogen temperature and for the two irradiated samples at room temperature. Absorption due to free carriers decreased at the longer wavelengths (10-15 microns) with irradiation and cooling as was expected from past experiments. The resistivity of Si₄ increased from an assumed initial value of 10³ ohm-om to 1.89 X 10⁵ ohm-om.

Name thesis:degree_name

Master of Science

Level thesis:degree_level

masters

Discipline thesis:degree_discipline

Nuclear Engineering Physics

Department dc:contributor.department

Nuclear Engineering Physics

Grantor dc:publisher

Virginia Polytechnic Institute

Year dc:date.issued

1960

Author dc:creator

• Harne, Jennings Sands

Statement dc:rights

• In Copyright

Licence dc:rights.uri

• http://rightsstatements.org/vocab/InC/1.0/

Language dc:language.iso

en_US

Handle dc:identifier.uri

http://hdl.handle.net/10919/53026

OAI identifier oai:identifier

oai:vtechworks.lib.vt.edu:10919/53026