{"id":{"repo_id":"vt","oai_identifier":"oai:vtechworks.lib.vt.edu:10919/53026"},"canonical_url":"https://search.dev.ndltd.org/etd/vt/oai:vtechworks.lib.vt.edu:10919/53026","repository":{"repo_id":"vt","name":"Virginia Tech","base_url":"https://vtechworks.lib.vt.edu/oai/request"},"display":{"title":"Infrared absorption of neutron irradiated silicon","abstract":"In this work the infrared absorption of neutron irradiated silicon was compared to that of non-irradiated silicon at room and liquid nitrogen temperatures. It was found that instead of the 1.75 micron absorption band that has been mentioned in numerous papers transmission was completely cut off below about 2.5 microns at room temperature and about 1.8 microns at liquid nitrogen temperature. A weak absorption band was noted at 4.4 microns for all three samples at liquid nitrogen temperature and for the two irradiated samples at room temperature. Absorption due to free carriers decreased at the longer wavelengths (10-15 microns) with irradiation and cooling as was expected from past experiments. The resistivity of Si₄ increased from an assumed initial value of 10³ ohm-om to 1.89 X 10⁵ ohm-om.","abstract_html":"In this work the infrared absorption of neutron irradiated silicon was compared to that of non-irradiated silicon at room and liquid nitrogen temperatures. It was found that instead of the 1.75 micron absorption band that has been mentioned in numerous papers transmission was completely cut off below about 2.5 microns at room temperature and about 1.8 microns at liquid nitrogen temperature. A weak absorption band was noted at 4.4 microns for all three samples at liquid nitrogen temperature and for the two irradiated samples at room temperature. Absorption due to free carriers decreased at the longer wavelengths (10-15 microns) with irradiation and cooling as was expected from past experiments. The resistivity of Si₄ increased from an assumed initial value of 10³ ohm-om to 1.89 X 10⁵ ohm-om.","abstract_has_math":false,"creators":["Harne, Jennings Sands"],"institution":"Virginia Polytechnic Institute","degree_name":"Master of Science","degree_level":"masters","degree_discipline":"Nuclear Engineering Physics","degree_department":"Nuclear Engineering Physics","school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":[],"year":1960,"date_issued":"1960","date_published":"1960","updated_at":"2026-07-22T22:20:20Z","subjects":[],"languages":["en_US"],"rights":["In Copyright"],"rights_urls":["http://rightsstatements.org/vocab/InC/1.0/"],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/10919/53026","outbound_label":"Handle","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor.department","label":"Department","values":["Nuclear Engineering Physics"]},{"key":"dc:creator","label":"Author","values":["Harne, Jennings Sands"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.accessioned","label":"Dc Date Accessioned","values":["2015-06-23T19:08:04Z"]},{"key":"dc:date.available","label":"Dc Date Available","values":["2015-06-23T19:08:04Z"]},{"key":"dc:date.issued","label":"Date","values":["1960"]},{"key":"dc:publisher","label":"Institution","values":["Virginia Polytechnic Institute"]},{"key":"dc:type","label":"Dc Type","values":["Thesis"]},{"key":"dc:type.dcmitype","label":"Dc Type Dcmitype","values":["Text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Nuclear Engineering Physics"]},{"key":"thesis:degree_level","label":"Degree Level","values":["masters"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Master of Science"]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["Virginia Polytechnic Institute"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language.iso","label":"Language (ISO)","values":["en_US"]},{"key":"dc:rights","label":"Dc Rights","values":["In Copyright"]},{"key":"dc:rights.uri","label":"Rights URI","values":["http://rightsstatements.org/vocab/InC/1.0/"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.uri","label":"Identifier URI","values":["http://hdl.handle.net/10919/53026"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["In this work the infrared absorption of neutron irradiated silicon was compared to that of non-irradiated silicon at room and liquid nitrogen temperatures. It was found that instead of the 1.75 micron absorption band that has been mentioned in numerous papers transmission was completely cut off below about 2.5 microns at room temperature and about 1.8 microns at liquid nitrogen temperature. A weak absorption band was noted at 4.4 microns for all three samples at liquid nitrogen temperature and for the two irradiated samples at room temperature. Absorption due to free carriers decreased at the longer wavelengths (10-15 microns) with irradiation and cooling as was expected from past experiments. The resistivity of Si₄ increased from an assumed initial value of 10³ ohm-om to 1.89 X 10⁵ ohm-om."]},{"key":"dc:description.degree","label":"Dc Description Degree","values":["Master of Science"]},{"key":"dc:format.mimetype","label":"Dc Format Mimetype","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Infrared absorption of neutron irradiated silicon"]}]}],"canonical_facts":{"dc:contributor.department":["Nuclear Engineering Physics"],"dc:creator":["Harne, Jennings Sands"],"dc:date.accessioned":["2015-06-23T19:08:04Z"],"dc:date.available":["2015-06-23T19:08:04Z"],"dc:date.issued":["1960"],"dc:description.abstract":["In this work the infrared absorption of neutron irradiated silicon was compared to that of non-irradiated silicon at room and liquid nitrogen temperatures. It was found that instead of the 1.75 micron absorption band that has been mentioned in numerous papers transmission was completely cut off below about 2.5 microns at room temperature and about 1.8 microns at liquid nitrogen temperature. A weak absorption band was noted at 4.4 microns for all three samples at liquid nitrogen temperature and for the two irradiated samples at room temperature. Absorption due to free carriers decreased at the longer wavelengths (10-15 microns) with irradiation and cooling as was expected from past experiments. The resistivity of Si₄ increased from an assumed initial value of 10³ ohm-om to 1.89 X 10⁵ ohm-om."],"dc:description.degree":["Master of Science"],"dc:format.mimetype":["application/pdf"],"dc:identifier.uri":["http://hdl.handle.net/10919/53026"],"dc:language.iso":["en_US"],"dc:publisher":["Virginia Polytechnic Institute"],"dc:rights":["In Copyright"],"dc:rights.uri":["http://rightsstatements.org/vocab/InC/1.0/"],"dc:title":["Infrared absorption of neutron irradiated silicon"],"dc:type":["Thesis"],"dc:type.dcmitype":["Text"],"thesis:degree_discipline":["Nuclear Engineering Physics"],"thesis:degree_level":["masters"],"thesis:degree_name":["Master of Science"],"thesis:institution_name":["Virginia Polytechnic Institute"]},"updated_at":"2026-07-22T22:20:20Z"}