Small Signal Equivalent Circuit Extraction From A Gallium Arsenide MESFET Device

The development of microwave Gallium Arsenide Metal Semiconductor Field Effect Transistor (MESFET) devices has enabled the miniaturization of pagers, cellular phones, and other electronic devices. With these MESFET devices comes the need to model them. This thesis extracts a small signal equivalent circuit model from a Gallium Arsenide MESFET device. The approach taken in this thesis is to use measured S- parameters to extract a small signal equivalent circuit model by optimization. Small signal models and S-parameters are explained. The Simplex Method is used to optimize the small signal equivalent circuit model. A thorough analysis of the strengths and weaknesses of the Simplex method is performed.

Name thesis:degree_name

Master of Science

Level thesis:degree_level

masters

Discipline thesis:degree_discipline

Electrical Engineering

Department dc:contributor.department

Electrical Engineering

Grantor dc:publisher

Virginia Tech

Year dc:date.issued

1997

Author dc:creator

• Lau, Mark C.

Chair dc:contributor.committeechair

• Elshabini-Riad, Aicha A.

Committee members dc:contributor.committeemember

• Bahl, I. J.
• Besieris, Ioannis M.

• MESFET
• Gallium Arsenide
• Small Signal
• Modeling
• Simplex Method

Statement dc:rights

• In Copyright

Licence dc:rights.uri

• http://rightsstatements.org/vocab/InC/1.0/

Dc Identifier Other

etd-7497-162858

OAI identifier oai:identifier

oai:vtechworks.lib.vt.edu:10919/36952