Design and Verification of a High Voltage, Capacitance Voltage Measurement System for Power MOSFETs

There is a need for a high voltage, capacitance voltage (HV, CV) measurement system for the measurement and characterization of silicon carbide (SiC) power MOSFETs. The following study discusses the circuit layout and automation software for a measurement system that can perform CV measurements for all three MOSFET capacitances, CGS, CDS, and CGD. This measurement system can perform low voltage (0–40V) and high voltage (40–5kV) measurements. Accuracy of the measurement system can be safely and effectively adjusted based on the magnitude of the MOSFET capacitance. An IRF1010N power MOSFET, a CoolMos, and a prototype SiC power MOSFET are all measured and their results are included in this study. All of the results for the IRF1010N and the CoolMos can be verified with established characteristics of power MOSFET capacitance. Results for the SiC power MOSFET prove that more testing and further development of SiC MOSFET fabrication is needed.

Name thesis:degree_name

Master of Science

Level thesis:degree_level

masters

Discipline thesis:degree_discipline

Electrical and Computer Engineering

Department dc:contributor.department

Electrical and Computer Engineering

Grantor dc:publisher

Virginia Tech

Year dc:date.issued

2008

Author dc:creator

• Ralston, Parrish Elaine

Chair dc:contributor.committeechair

• Meehan, Kathleen

Committee members dc:contributor.committeemember

• Lai, Jih-Sheng
• Raman, Sanjay
• Bostian, Charles W.
• Hendrix, Robert
• Agah, Masoud

• power electronics
• power MOSFET
• capacitance
• silicon carbide
• capacitance voltage measurements

Statement dc:rights

• In Copyright

Licence dc:rights.uri

• http://rightsstatements.org/vocab/InC/1.0/

Dc Identifier Other

etd-12152008-172537

OAI identifier oai:identifier

oai:vtechworks.lib.vt.edu:10919/36169