{"id":{"repo_id":"vt","oai_identifier":"oai:vtechworks.lib.vt.edu:10919/36169"},"canonical_url":"https://search.dev.ndltd.org/etd/vt/oai:vtechworks.lib.vt.edu:10919/36169","repository":{"repo_id":"vt","name":"Virginia Tech","base_url":"https://vtechworks.lib.vt.edu/oai/request"},"display":{"title":"Design and Verification of a High Voltage, Capacitance Voltage Measurement System for Power MOSFETs","abstract":"There is a need for a high voltage, capacitance voltage (HV, CV) measurement system for the measurement and characterization of silicon carbide (SiC) power MOSFETs. The following study discusses the circuit layout and automation software for a measurement system that can perform CV measurements for all three MOSFET capacitances, CGS, CDS, and CGD. This measurement system can perform low voltage (0–40V) and high voltage (40–5kV) measurements. Accuracy of the measurement system can be safely and effectively adjusted based on the magnitude of the MOSFET capacitance. An IRF1010N power MOSFET, a CoolMos, and a prototype SiC power MOSFET are all measured and their results are included in this study. All of the results for the IRF1010N and the CoolMos can be verified with established characteristics of power MOSFET capacitance. Results for the SiC power MOSFET prove that more testing and further development of SiC MOSFET fabrication is needed.","abstract_html":"There is a need for a high voltage, capacitance voltage (HV, CV) measurement system for the measurement and characterization of silicon carbide (SiC) power MOSFETs. The following study discusses the circuit layout and automation software for a measurement system that can perform CV measurements for all three MOSFET capacitances, CGS, CDS, and CGD. This measurement system can perform low voltage (0–40V) and high voltage (40–5kV) measurements. Accuracy of the measurement system can be safely and effectively adjusted based on the magnitude of the MOSFET capacitance. An IRF1010N power MOSFET, a CoolMos, and a prototype SiC power MOSFET are all measured and their results are included in this study. All of the results for the IRF1010N and the CoolMos can be verified with established characteristics of power MOSFET capacitance. Results for the SiC power MOSFET prove that more testing and further development of SiC MOSFET fabrication is needed.","abstract_has_math":false,"creators":["Ralston, Parrish Elaine"],"institution":"Virginia Tech","degree_name":"Master of Science","degree_level":"masters","degree_discipline":"Electrical and Computer Engineering","degree_department":"Electrical and Computer Engineering","school":null,"contributors":[],"advisors":[],"committee_chairs":["Meehan, Kathleen"],"committee_members":["Lai, Jih-Sheng","Raman, Sanjay","Bostian, Charles W.","Hendrix, Robert","Agah, Masoud"],"year":2008,"date_issued":"2008-12-12","date_published":"2008-12-12","updated_at":"2026-07-22T22:20:07Z","subjects":["power electronics","power MOSFET","capacitance","silicon carbide","capacitance voltage measurements"],"languages":[],"rights":["In Copyright"],"rights_urls":["http://rightsstatements.org/vocab/InC/1.0/"],"identifier_entries":[{"key":"dc:identifier.other","label":"Dc Identifier Other","values":["etd-12152008-172537"],"render_values":[{"text":"etd-12152008-172537","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/10919/36169","outbound_label":"Handle","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor.committeechair","label":"Committee Chair","values":["Meehan, Kathleen"]},{"key":"dc:contributor.committeemember","label":"Committee Member","values":["Lai, Jih-Sheng","Raman, Sanjay","Bostian, Charles W.","Hendrix, Robert","Agah, Masoud"]},{"key":"dc:contributor.department","label":"Department","values":["Electrical and Computer Engineering"]},{"key":"dc:creator","label":"Author","values":["Ralston, Parrish Elaine"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.accessioned","label":"Dc Date Accessioned","values":["2014-03-14T20:49:59Z"]},{"key":"dc:date.available","label":"Dc Date Available","values":["2014-03-14T20:49:59Z","2009-01-08"]},{"key":"dc:date.issued","label":"Date","values":["2008-12-12"]},{"key":"dc:publisher","label":"Institution","values":["Virginia Tech"]},{"key":"dc:type","label":"Dc Type","values":["Thesis"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical and Computer Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["masters"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Master of Science"]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["Virginia Polytechnic Institute and State University"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["power electronics","power MOSFET","capacitance","silicon carbide","capacitance voltage measurements"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:rights","label":"Dc Rights","values":["In Copyright"]},{"key":"dc:rights.uri","label":"Rights URI","values":["http://rightsstatements.org/vocab/InC/1.0/"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.other","label":"Dc Identifier Other","values":["etd-12152008-172537"]},{"key":"dc:identifier.uri","label":"Identifier URI","values":["http://hdl.handle.net/10919/36169"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["There is a need for a high voltage, capacitance voltage (HV, CV) measurement system for the measurement and characterization of silicon carbide (SiC) power MOSFETs. The following study discusses the circuit layout and automation software for a measurement system that can perform CV measurements for all three MOSFET capacitances, CGS, CDS, and CGD. This measurement system can perform low voltage (0–40V) and high voltage (40–5kV) measurements. Accuracy of the measurement system can be safely and effectively adjusted based on the magnitude of the MOSFET capacitance. An IRF1010N power MOSFET, a CoolMos, and a prototype SiC power MOSFET are all measured and their results are included in this study. All of the results for the IRF1010N and the CoolMos can be verified with established characteristics of power MOSFET capacitance. Results for the SiC power MOSFET prove that more testing and further development of SiC MOSFET fabrication is needed."]},{"key":"dc:description.degree","label":"Dc Description Degree","values":["Master of Science"]},{"key":"dc:title","label":"Title","values":["Design and Verification of a High Voltage, Capacitance Voltage Measurement System for Power MOSFETs"]}]}],"canonical_facts":{"dc:contributor.committeechair":["Meehan, Kathleen"],"dc:contributor.committeemember":["Lai, Jih-Sheng","Raman, Sanjay","Bostian, Charles W.","Hendrix, Robert","Agah, Masoud"],"dc:contributor.department":["Electrical and Computer Engineering"],"dc:creator":["Ralston, Parrish Elaine"],"dc:date.accessioned":["2014-03-14T20:49:59Z"],"dc:date.available":["2014-03-14T20:49:59Z","2009-01-08"],"dc:date.issued":["2008-12-12"],"dc:description.abstract":["There is a need for a high voltage, capacitance voltage (HV, CV) measurement system for the measurement and characterization of silicon carbide (SiC) power MOSFETs. The following study discusses the circuit layout and automation software for a measurement system that can perform CV measurements for all three MOSFET capacitances, CGS, CDS, and CGD. This measurement system can perform low voltage (0–40V) and high voltage (40–5kV) measurements. Accuracy of the measurement system can be safely and effectively adjusted based on the magnitude of the MOSFET capacitance. An IRF1010N power MOSFET, a CoolMos, and a prototype SiC power MOSFET are all measured and their results are included in this study. All of the results for the IRF1010N and the CoolMos can be verified with established characteristics of power MOSFET capacitance. Results for the SiC power MOSFET prove that more testing and further development of SiC MOSFET fabrication is needed."],"dc:description.degree":["Master of Science"],"dc:identifier.other":["etd-12152008-172537"],"dc:identifier.uri":["http://hdl.handle.net/10919/36169"],"dc:publisher":["Virginia Tech"],"dc:rights":["In Copyright"],"dc:rights.uri":["http://rightsstatements.org/vocab/InC/1.0/"],"dc:subject":["power electronics","power MOSFET","capacitance","silicon carbide","capacitance voltage measurements"],"dc:title":["Design and Verification of a High Voltage, Capacitance Voltage Measurement System for Power MOSFETs"],"dc:type":["Thesis"],"thesis:degree_discipline":["Electrical and Computer Engineering"],"thesis:degree_level":["masters"],"thesis:degree_name":["Master of Science"],"thesis:institution_name":["Virginia Polytechnic Institute and State University"]},"updated_at":"2026-07-22T22:20:07Z"}