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Virginia Tech

Q-Enhanced LC Resonators for Monolithic, Low-Loss Filters in Gallium Arsenide Technology

Abstract

dc:description.abstract

The rapid development of wireless applications has created a demand for low-cost, compact, low-power hardware solutions. This demand has driven efforts to realize fully integrated, "single-chip" systems. While substantial progress had been made in the integration of many RF and baseband processing elements through the development of new technologies and refinements of existing technologies, progress in the area of fully monolithic filters has been limited due to the losses (low Qs) associated with integrated passive elements in standard IC processes. The work in this thesis focuses on the development low-loss, Q-enhanced LC filters in GaAs E/D-SAGFET technology. This thesis presents a methodology for designing Q-enhanced LC resonators and low-loss, monolithic LC filters based on these resonators. The first phase of this work focused on the Q-enhancement of LC resonator structures using FET-based active negative resistance circuits. Three passive resonators were designed, fabricated, and measured to determine their loss and frequency response. Furthermore, six Q-enhanced resonators were designed, fabricated, and measured to compare the performance of various negative resistance circuit designs. In the second phase of this work, four of these Q-enhanced resonator designs were used to implement fully-integrated second-order Butterworth bandpass filters. Each filter was designed for a 60 MHz, -3 dB bandwidth centered at 1.88 GHz, corresponding to the North American PCS transmit band. The best filter design achieves 0 dB of passband insertion loss while consuming 16 mA of current from a 3 V source (48 mW). Passband gain (up to 15 dB) can be achieved with increased bias current before instability is encountered. The filter provides more than 30 dB of rejection at 1.7 and 2 GHz and more than 70 dB of rejection below 1.5 GHz. In the filter passband, the noise figure is 12 dB and the output 1 dB compression point is -18 dBm. These Q-enhanced LC filters have potential application as image-reject filters in GaAs integrated transceiver designs.

Degree

thesis:*
Name thesis:degree_name
Master of Science
Level thesis:degree_level
masters
Discipline thesis:degree_discipline
Electrical and Computer Engineering
Department dc:contributor.department
Electrical and Computer Engineering
Grantor dc:publisher
Virginia Tech
Year dc:date.issued
2001

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • McCloskey, Edward Daniel
Chair dc:contributor.committeechair
  • Raman, Sanjay
Committee members dc:contributor.committeemember
  • Bostian, Charles W.
  • Stephenson, F. William

Subjects

dc:subject × 7

Rights

dc:rights
Statement dc:rights
  • In Copyright

Identifiers

dc:identifier.*
Dc Identifier Other
etd-04272001-095623
OAI identifier oai:identifier
oai:vtechworks.lib.vt.edu:10919/31959

Chain of custody

source
Harvested from
Virginia Tech
Base URL
vtechworks.lib.vt.edu/oai/request
Last updated
2026-07-22
Source record
OAI-PMH GetRecord
citation

McCloskey, Edward Daniel. Q-Enhanced LC Resonators for Monolithic, Low-Loss Filters in Gallium Arsenide Technology. masters thesis, Virginia Tech, 2001. http://hdl.handle.net/10919/31959