Abstract
dc:description.abstractGaN holds significant potential as a material for vertical p-n diodes, enabling the realization of devices with reverse breakdown voltages of 5 kV or higher. Carbon serves as the primary compensating dopant in the growth process, incorporated into GaN during metalorganic chemical vapor deposition (MOCVD) growth. The level of carbon incorporation depends on several factors, including growth rate, ammonia flow, temperature, pressure, and trimethylgallium (TMGa) flow. Through guided empirical modeling, it was demonstrated that the carbon incorporation in GaN growth could be predicted using a single parameter based on the ratio of ammonia flow to the growth rate. This model accurately predicts carbon concentrations ranging from 1x1017 to 5x1014 cm-3 while allowing for maximized growth rates. Other extrinsic dopants have either been reduced below the threshold of consideration or modeled using similar single-parameter relationships. By identifying the dominant extrinsic dopants and accounting for them, an intrinsic defect with a concentration of 2.2x1015 cm-3 was identified. By combining these relationships, growth conditions for n-GaN were optimized, resulting in electron concentrations as low as 1x1015 cm-3. Leveraging these techniques, p-n diodes were grown, achieving a reverse breakdown voltage as high as 3.1 kV.
Degree
thesis:*- Name thesis:degree_name
- Doctor of Philosophy
- Level thesis:degree_level
- doctoral
- Discipline thesis:degree_discipline
- Materials Science and Engineering
- Department dc:contributor.department
- Materials Science and Engineering
- Grantor dc:publisher
- Virginia Tech
- Year dc:date.issued
- 2023
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Carlson, Eric Paul
- Chair dc:contributor.committeechair
-
- Guido, Louis J.
- Committee members dc:contributor.committeemember
-
- Lu, Guo Quan
- Suchicital, Carlos T. A.
- Reynolds, William T. Jr.
- Ngo, Khai D.
Subjects
dc:subject × 8Rights
dc:rights- Statement dc:rights
-
- In Copyright
- Licence dc:rights.uri
- Language dc:language.iso
- en
Identifiers
dc:identifier.*- Dc Identifier Other
- vt_gsexam:37926
- OAI identifier oai:identifier
- oai:vtechworks.lib.vt.edu:10919/115781