Growth of CdTe/ CdZnTe single crystals by the vertical gradient freezing method

Single crystals of CdTe/CdZnTe are important semiconducting materials for the development of x-ray and y-ray detectors. They can also be used as substrates for the epitaxial growth of HgCdTe, which is a key material for far-infrared detectors with high resolution and large detection area. Currently, there are no mature techniques to grow CdTe/CdZnTe single crystals, and the cost of these materials for commercial purposes is still high. In this thesis, a combined experimental/ theoretical study is undertaken. The phenomena of supercooling and superheating of CdTe/CdZnTe, which play an important role in the quality and size of grown crystals, are discussed. A VGF crystal growth facility and a growth procedure for CdTe/CdZnTe are developed. A unique technique (temperature profile) is designed to take advantages of superheating and confine the detrimental effect of supercooling during crystal growth. The electrical properties and defect structures of the CdTe/CdZnTe crystals grown by this VGF facility are also analyzed and reported.

Author dc:creator

• Li, Lingzhi

Statement dc:rights

• Available to the World Wide Web

Handle dc:identifier.uri

https://hdl.handle.net/1828/18652

OAI identifier oai:identifier

oai:dspace.library.uvic.ca:1828/18652