{"id":{"repo_id":"uvic","oai_identifier":"oai:dspace.library.uvic.ca:1828/18652"},"canonical_url":"https://search.dev.ndltd.org/etd/uvic/oai:dspace.library.uvic.ca:1828/18652","repository":{"repo_id":"uvic","name":"University of Victoria (Canada)","base_url":"https://dspace.library.uvic.ca/server/oai/request"},"display":{"title":"Growth of CdTe/ CdZnTe single crystals by the vertical gradient freezing method","abstract":"Single crystals of CdTe/CdZnTe are important semiconducting materials for the development of x-ray and y-ray detectors. They can also be used as substrates for the epitaxial growth of HgCdTe, which is a key material for far-infrared detectors with high resolution and large detection area. Currently, there are no mature techniques to grow CdTe/CdZnTe single crystals, and the cost of these materials for commercial purposes is still high. In this thesis, a combined experimental/ theoretical study is undertaken. The phenomena of supercooling and superheating of CdTe/CdZnTe, which play an important role in the quality and size of grown crystals, are discussed. A VGF crystal growth facility and a growth procedure for CdTe/CdZnTe are developed. A unique technique (temperature profile) is designed to take advantages of superheating and confine the detrimental effect of supercooling during crystal growth. The electrical properties and defect structures of the CdTe/CdZnTe crystals grown by this VGF facility are also analyzed and reported.","abstract_html":"Single crystals of CdTe/CdZnTe are important semiconducting materials for the development of x-ray and y-ray detectors. They can also be used as substrates for the epitaxial growth of HgCdTe, which is a key material for far-infrared detectors with high resolution and large detection area. Currently, there are no mature techniques to grow CdTe/CdZnTe single crystals, and the cost of these materials for commercial purposes is still high. In this thesis, a combined experimental/ theoretical study is undertaken. The phenomena of supercooling and superheating of CdTe/CdZnTe, which play an important role in the quality and size of grown crystals, are discussed. A VGF crystal growth facility and a growth procedure for CdTe/CdZnTe are developed. A unique technique (temperature profile) is designed to take advantages of superheating and confine the detrimental effect of supercooling during crystal growth. The electrical properties and defect structures of the CdTe/CdZnTe crystals grown by this VGF facility are also analyzed and reported.","abstract_has_math":false,"creators":["Li, Lingzhi"],"institution":null,"degree_name":null,"degree_level":null,"degree_discipline":null,"degree_department":null,"school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":[],"year":1999,"date_issued":"1999","date_published":"1999","updated_at":"2026-07-24T05:52:40Z","subjects":[],"languages":[],"rights":["Available to the World Wide Web"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"https://hdl.handle.net/1828/18652","outbound_label":"Handle","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:creator","label":"Author","values":["Li, Lingzhi"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.accessioned","label":"Dc Date Accessioned","values":["2024-08-14T21:03:36Z"]},{"key":"dc:date.available","label":"Dc Date Available","values":["2024-08-14T21:03:36Z"]},{"key":"dc:date.issued","label":"Date","values":["1999"]},{"key":"dc:type","label":"Dc Type","values":["Thesis"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:rights","label":"Dc Rights","values":["Available to the World Wide Web"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.uri","label":"Identifier URI","values":["https://hdl.handle.net/1828/18652"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["Single crystals of CdTe/CdZnTe are important semiconducting materials for the development of x-ray and y-ray detectors. They can also be used as substrates for the epitaxial growth of HgCdTe, which is a key material for far-infrared detectors with high resolution and large detection area. Currently, there are no mature techniques to grow CdTe/CdZnTe single crystals, and the cost of these materials for commercial purposes is still high. In this thesis, a combined experimental/ theoretical study is undertaken. The phenomena of supercooling and superheating of CdTe/CdZnTe, which play an important role in the quality and size of grown crystals, are discussed. A VGF crystal growth facility and a growth procedure for CdTe/CdZnTe are developed. A unique technique (temperature profile) is designed to take advantages of superheating and confine the detrimental effect of supercooling during crystal growth. The electrical properties and defect structures of the CdTe/CdZnTe crystals grown by this VGF facility are also analyzed and reported."]},{"key":"dc:title","label":"Title","values":["Growth of CdTe/ CdZnTe single crystals by the vertical gradient freezing method"]}]}],"canonical_facts":{"dc:creator":["Li, Lingzhi"],"dc:date.accessioned":["2024-08-14T21:03:36Z"],"dc:date.available":["2024-08-14T21:03:36Z"],"dc:date.issued":["1999"],"dc:description.abstract":["Single crystals of CdTe/CdZnTe are important semiconducting materials for the development of x-ray and y-ray detectors. They can also be used as substrates for the epitaxial growth of HgCdTe, which is a key material for far-infrared detectors with high resolution and large detection area. Currently, there are no mature techniques to grow CdTe/CdZnTe single crystals, and the cost of these materials for commercial purposes is still high. In this thesis, a combined experimental/ theoretical study is undertaken. The phenomena of supercooling and superheating of CdTe/CdZnTe, which play an important role in the quality and size of grown crystals, are discussed. A VGF crystal growth facility and a growth procedure for CdTe/CdZnTe are developed. A unique technique (temperature profile) is designed to take advantages of superheating and confine the detrimental effect of supercooling during crystal growth. The electrical properties and defect structures of the CdTe/CdZnTe crystals grown by this VGF facility are also analyzed and reported."],"dc:identifier.uri":["https://hdl.handle.net/1828/18652"],"dc:rights":["Available to the World Wide Web"],"dc:title":["Growth of CdTe/ CdZnTe single crystals by the vertical gradient freezing method"],"dc:type":["Thesis"]},"updated_at":"2026-07-24T05:52:40Z"}