Compact modeling of neutron damage effects in a bipolar junction transistor

The performance of microelectronics in a radiation environment is an important concern for defense and space applications. Bipolar junction transistors (BJTs), in particular, are susceptible to neutron radiation. Neutron radiation affects BJT performance primarily by creating lattice defects, which can dramatically increase carrier recombination rate. In turn, the increase in recombination rate degrades the current gain. Two approaches were taken in the development of a compact BJT model that include the effects of static neutron damage. One approach is based on the Gummel-Poon term for recombination current. The other approach is based on the Shockley-Read-Hall theory of recombination. Simulation results of the BJT neutron-effects model compare favorably with measured data of BJT test structures. Application of the neutron-effects BJT model in a voltage reference circuit provides critical information for circuit design in a neutron environment.

Name thesis:degree_name

Electrical Engineering

Level thesis:degree_level

Thesis

Discipline thesis:degree_discipline

Electrical and Computer Engineering

Year

2007

Author dc:creator

• Gutierrez, Teresa

Contributors dc:contributor

• Hawkins, Charles
• Hembree, Charles
• Gilmore, Mark

• Microelectronics

Language dc:language

English

Repository record dc:identifier

https://digitalrepository.unm.edu/ece_etds/109

OAI identifier oai:identifier

oai:digitalrepository.unm.edu:ece_etds-1108