University of Nevada, Las Vegas
Fabrication of nonlithographic semiconductor quantum wire infrared photodetector
Abstract
dc:description.abstractThe thesis describes novel semiconductor quantum wire infrared photodetectors in the long- and very long-wavelength regions. The infrared photodetectors are based on intersubband transitions in semiconductor quantum wires and have the potential for higher operational temperature, increased signal-to-noise ratio, reduced dark current, wider spectral range and sensitivity to normal incident radiation. The quantum wire IR detectors were implemented using a nonlithographic nanostructure fabrication technique that is capable of producing large arrays of semiconductor quantum wires of a variety of materials and on different substrates. The operational principles, design procedure as well as the implementation of the quantum wire photodetectors using electrochemical anodization will be described.
Degree
thesis:*- Name thesis:degree_name
- Master of Science (MS)
- Level thesis:degree_level
- Thesis
- Discipline thesis:degree_discipline
- Electrical and Computer Engineering
- Grantor dc:publisher
- University of Nevada, Las Vegas
- Year
- 2004
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Singaraju Venkata Sai, Pavan Kumar
- Contributors dc:contributor
-
- Biswajit Das
Rights
dc:rights- Statement dc:rights
-
- IN COPYRIGHT. For more information about this rights statement, please visit http://rightsstatements.org/vocab/InC/1.0/
- Language dc:language
- English
Identifiers
dc:identifier.*- Identifier
- https://oasis.library.unlv.edu/rtds/1699
- OAI identifier oai:identifier
- oai:oasis.library.unlv.edu:rtds-2698