{"id":{"repo_id":"unlv","oai_identifier":"oai:oasis.library.unlv.edu:rtds-2698"},"canonical_url":"https://search.dev.ndltd.org/etd/unlv/oai:oasis.library.unlv.edu:rtds-2698","repository":{"repo_id":"unlv","name":"University of Nevada - Las Vegas","base_url":"https://oasis.library.unlv.edu/do/oai/"},"display":{"title":"Fabrication of nonlithographic semiconductor quantum wire infrared photodetector","abstract":"The thesis describes novel semiconductor quantum wire infrared photodetectors in the long- and very long-wavelength regions. The infrared photodetectors are based on intersubband transitions in semiconductor quantum wires and have the potential for higher operational temperature, increased signal-to-noise ratio, reduced dark current, wider spectral range and sensitivity to normal incident radiation. The quantum wire IR detectors were implemented using a nonlithographic nanostructure fabrication technique that is capable of producing large arrays of semiconductor quantum wires of a variety of materials and on different substrates. The operational principles, design procedure as well as the implementation of the quantum wire photodetectors using electrochemical anodization will be described.","abstract_html":"The thesis describes novel semiconductor quantum wire infrared photodetectors in the long- and very long-wavelength regions. The infrared photodetectors are based on intersubband transitions in semiconductor quantum wires and have the potential for higher operational temperature, increased signal-to-noise ratio, reduced dark current, wider spectral range and sensitivity to normal incident radiation. The quantum wire IR detectors were implemented using a nonlithographic nanostructure fabrication technique that is capable of producing large arrays of semiconductor quantum wires of a variety of materials and on different substrates. The operational principles, design procedure as well as the implementation of the quantum wire photodetectors using electrochemical anodization will be described.","abstract_has_math":false,"creators":["Singaraju Venkata Sai, Pavan Kumar"],"institution":"University of Nevada, Las Vegas","degree_name":"Master of Science (MS)","degree_level":"Thesis","degree_discipline":"Electrical and Computer Engineering","degree_department":null,"school":null,"contributors":["Biswajit Das"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2004,"date_issued":"2004-01-01T08:00:00Z","date_published":"2004-01-01T08:00:00Z","updated_at":"2026-07-24T05:25:47Z","subjects":[],"languages":["English"],"rights":["IN COPYRIGHT. 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The quantum wire IR detectors were implemented using a nonlithographic nanostructure fabrication technique that is capable of producing large arrays of semiconductor quantum wires of a variety of materials and on different substrates. The operational principles, design procedure as well as the implementation of the quantum wire photodetectors using electrochemical anodization will be described."]},{"key":"dc:format","label":"Dc Format","values":["pdf"]},{"key":"dc:title","label":"Title","values":["Fabrication of nonlithographic semiconductor quantum wire infrared photodetector"]}]}],"canonical_facts":{"dc:contributor":["Biswajit Das"],"dc:creator":["Singaraju Venkata Sai, Pavan Kumar"],"dc:description.abstract":["The thesis describes novel semiconductor quantum wire infrared photodetectors in the long- and very long-wavelength regions. The infrared photodetectors are based on intersubband transitions in semiconductor quantum wires and have the potential for higher operational temperature, increased signal-to-noise ratio, reduced dark current, wider spectral range and sensitivity to normal incident radiation. The quantum wire IR detectors were implemented using a nonlithographic nanostructure fabrication technique that is capable of producing large arrays of semiconductor quantum wires of a variety of materials and on different substrates. The operational principles, design procedure as well as the implementation of the quantum wire photodetectors using electrochemical anodization will be described."],"dc:format":["pdf"],"dc:identifier":["10.25669/6j2n-u0mx","https://oasis.library.unlv.edu/rtds/1699","https://oasis.library.unlv.edu/context/rtds/article/2698/viewcontent/uc.pdf"],"dc:language":["English"],"dc:publisher":["University of Nevada, Las Vegas"],"dc:rights":["IN COPYRIGHT. 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