Formulation of a full dynamic transport model for heterojunction devices

In this thesis a Full Dynamic Transport Model is presented which consists of the Momentum Conservation Equation (MCE), Energy Conservation Equation (ECE), Particle Conservation Equation (PCE), and Poisson's Equation. In our model carrier velocity and electron energy are taken as variables and have been found using electron concentration and electrostatic potential; It has been found that by increasing the doping from 10{dollar}\sp{16}cm\sp{-3}{dollar} to 5 {dollar}\times{dollar} 10{dollar}\sp{17}cm\sp{-3}{dollar}, the built-in voltage of an {dollar}Al\sb{0.3}Ga\sb{0.7}As/GaAs{dollar} heterojunction increases from 1.33V to 1.54V which is consistent with the results reported by others (1) {dollar}-{dollar} (4). Maximum velocity of electrons changes from 2.5 {dollar}\times{dollar} 10{dollar}\sp7{dollar}cm/sec to 1.8 {dollar}\times{dollar} 10{dollar}\sp7{dollar} cm/sec, which is due to the increased collision of electrons with doping impurities. This is also the reason for increased electron average energy from 270mev to 640mev. This increase in energy is believed to be due to the hot-electron phenomenon. (Abstract shortened with permission of author.).

Name thesis:degree_name

Master of Science (MS)

Level thesis:degree_level

Thesis

Discipline thesis:degree_discipline

Computer Science and Electrical Engineering

Grantor dc:publisher

University of Nevada, Las Vegas

Year

1991

Author dc:creator

• Arman, Anoushiravan

Contributors dc:contributor

• Rahim Khoie

Statement dc:rights

• IN COPYRIGHT. For more information about this rights statement, please visit http://rightsstatements.org/vocab/InC/1.0/

Language dc:language

English

Identifier

https://oasis.library.unlv.edu/rtds/157

OAI identifier oai:identifier

oai:oasis.library.unlv.edu:rtds-1156