{"id":{"repo_id":"unlv","oai_identifier":"oai:oasis.library.unlv.edu:rtds-1156"},"canonical_url":"https://search.dev.ndltd.org/etd/unlv/oai:oasis.library.unlv.edu:rtds-1156","repository":{"repo_id":"unlv","name":"University of Nevada - Las Vegas","base_url":"https://oasis.library.unlv.edu/do/oai/"},"display":{"title":"Formulation of a full dynamic transport model for heterojunction devices","abstract":"In this thesis a Full Dynamic Transport Model is presented which consists of the Momentum Conservation Equation (MCE), Energy Conservation Equation (ECE), Particle Conservation Equation (PCE), and Poisson's Equation. In our model carrier velocity and electron energy are taken as variables and have been found using electron concentration and electrostatic potential; It has been found that by increasing the doping from 10{dollar}\\sp{16}cm\\sp{-3}{dollar} to 5 {dollar}\\times{dollar} 10{dollar}\\sp{17}cm\\sp{-3}{dollar}, the built-in voltage of an {dollar}Al\\sb{0.3}Ga\\sb{0.7}As/GaAs{dollar} heterojunction increases from 1.33V to 1.54V which is consistent with the results reported by others (1) {dollar}-{dollar} (4). Maximum velocity of electrons changes from 2.5 {dollar}\\times{dollar} 10{dollar}\\sp7{dollar}cm/sec to 1.8 {dollar}\\times{dollar} 10{dollar}\\sp7{dollar} cm/sec, which is due to the increased collision of electrons with doping impurities. This is also the reason for increased electron average energy from 270mev to 640mev. This increase in energy is believed to be due to the hot-electron phenomenon. (Abstract shortened with permission of author.).","abstract_html":"In this thesis a Full Dynamic Transport Model is presented which consists of the Momentum Conservation Equation (MCE), Energy Conservation Equation (ECE), Particle Conservation Equation (PCE), and Poisson's Equation. In our model carrier velocity and electron energy are taken as variables and have been found using electron concentration and electrostatic potential; It has been found that by increasing the doping from 10{dollar}\\sp{16}cm\\sp{-3}{dollar} to 5 {dollar}\\times{dollar} 10{dollar}\\sp{17}cm\\sp{-3}{dollar}, the built-in voltage of an {dollar}Al\\sb{0.3}Ga\\sb{0.7}As/GaAs{dollar} heterojunction increases from 1.33V to 1.54V which is consistent with the results reported by others (1) {dollar}-{dollar} (4). Maximum velocity of electrons changes from 2.5 {dollar}\\times{dollar} 10{dollar}\\sp7{dollar}cm/sec to 1.8 {dollar}\\times{dollar} 10{dollar}\\sp7{dollar} cm/sec, which is due to the increased collision of electrons with doping impurities. This is also the reason for increased electron average energy from 270mev to 640mev. This increase in energy is believed to be due to the hot-electron phenomenon. (Abstract shortened with permission of author.).","abstract_has_math":false,"creators":["Arman, Anoushiravan"],"institution":"University of Nevada, Las Vegas","degree_name":"Master of Science (MS)","degree_level":"Thesis","degree_discipline":"Computer Science and Electrical Engineering","degree_department":null,"school":null,"contributors":["Rahim Khoie"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":1991,"date_issued":"1991-01-01T08:00:00Z","date_published":"1991-01-01T08:00:00Z","updated_at":"2026-07-24T05:24:07Z","subjects":[],"languages":["English"],"rights":["IN COPYRIGHT. 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In our model carrier velocity and electron energy are taken as variables and have been found using electron concentration and electrostatic potential; It has been found that by increasing the doping from 10{dollar}\\sp{16}cm\\sp{-3}{dollar} to 5 {dollar}\\times{dollar} 10{dollar}\\sp{17}cm\\sp{-3}{dollar}, the built-in voltage of an {dollar}Al\\sb{0.3}Ga\\sb{0.7}As/GaAs{dollar} heterojunction increases from 1.33V to 1.54V which is consistent with the results reported by others (1) {dollar}-{dollar} (4). Maximum velocity of electrons changes from 2.5 {dollar}\\times{dollar} 10{dollar}\\sp7{dollar}cm/sec to 1.8 {dollar}\\times{dollar} 10{dollar}\\sp7{dollar} cm/sec, which is due to the increased collision of electrons with doping impurities. This is also the reason for increased electron average energy from 270mev to 640mev. This increase in energy is believed to be due to the hot-electron phenomenon. (Abstract shortened with permission of author.)."]},{"key":"dc:format","label":"Dc Format","values":["pdf"]},{"key":"dc:title","label":"Title","values":["Formulation of a full dynamic transport model for heterojunction devices"]}]}],"canonical_facts":{"dc:contributor":["Rahim Khoie"],"dc:creator":["Arman, Anoushiravan"],"dc:description.abstract":["In this thesis a Full Dynamic Transport Model is presented which consists of the Momentum Conservation Equation (MCE), Energy Conservation Equation (ECE), Particle Conservation Equation (PCE), and Poisson's Equation. In our model carrier velocity and electron energy are taken as variables and have been found using electron concentration and electrostatic potential; It has been found that by increasing the doping from 10{dollar}\\sp{16}cm\\sp{-3}{dollar} to 5 {dollar}\\times{dollar} 10{dollar}\\sp{17}cm\\sp{-3}{dollar}, the built-in voltage of an {dollar}Al\\sb{0.3}Ga\\sb{0.7}As/GaAs{dollar} heterojunction increases from 1.33V to 1.54V which is consistent with the results reported by others (1) {dollar}-{dollar} (4). Maximum velocity of electrons changes from 2.5 {dollar}\\times{dollar} 10{dollar}\\sp7{dollar}cm/sec to 1.8 {dollar}\\times{dollar} 10{dollar}\\sp7{dollar} cm/sec, which is due to the increased collision of electrons with doping impurities. This is also the reason for increased electron average energy from 270mev to 640mev. This increase in energy is believed to be due to the hot-electron phenomenon. (Abstract shortened with permission of author.)."],"dc:format":["pdf"],"dc:identifier":["10.25669/bby8-yxv2","https://oasis.library.unlv.edu/rtds/157","https://oasis.library.unlv.edu/context/rtds/article/1156/viewcontent/uc.pdf"],"dc:language":["English"],"dc:publisher":["University of Nevada, Las Vegas"],"dc:rights":["IN COPYRIGHT. For more information about this rights statement, please visit http://rightsstatements.org/vocab/InC/1.0/"],"dc:title":["Formulation of a full dynamic transport model for heterojunction devices"],"dc:type":["Text"],"thesis:degree_discipline":["Computer Science and Electrical Engineering"],"thesis:degree_level":["Thesis"],"thesis:degree_name":["Master of Science (MS)"]},"updated_at":"2026-07-24T05:24:07Z"}