A two-dimensional numerical model of the high electron mobility transistor

A two-dimensional numerical model of the high electron mobility transistor (HEMT) with consideration of quantization in the channel is presented. In this model, the spatial spread of the electron concentration in the quantum well normal to the heterojunction is taken into consideration by solving Schrodinger's and Poisson's equations self-consistently. The Boltzmann transport equation in the form of a current continuity equation and an energy transport equation is solved to obtain the transient transport behavior. Transport of carriers takes place in two layers in the GaAs region: the lowest subband of the quantum well and a non-quantized bulk layer; The simulation program investigates the effects on the overall performance of the device due to variation of the gate length and the impurity doping concentration in AlGaAs. A reduction in the gate length results in an increase of the drain current which is partly due to a shift in the threshold voltage. (Abstract shortened with permission of author.).

Name thesis:degree_name

Master of Science (MS)

Level thesis:degree_level

Thesis

Discipline thesis:degree_discipline

Electrical and Computer Engineering

Grantor dc:publisher

University of Nevada, Las Vegas

Year

1989

Author dc:creator

• Ng, Sze-Him

Statement dc:rights

• IN COPYRIGHT. For more information about this rights statement, please visit http://rightsstatements.org/vocab/InC/1.0/

Language dc:language

English

Identifier

https://oasis.library.unlv.edu/rtds/28

OAI identifier oai:identifier

oai:oasis.library.unlv.edu:rtds-1027