{"id":{"repo_id":"unlv","oai_identifier":"oai:oasis.library.unlv.edu:rtds-1027"},"canonical_url":"https://search.dev.ndltd.org/etd/unlv/oai:oasis.library.unlv.edu:rtds-1027","repository":{"repo_id":"unlv","name":"University of Nevada - Las Vegas","base_url":"https://oasis.library.unlv.edu/do/oai/"},"display":{"title":"A two-dimensional numerical model of the high electron mobility transistor","abstract":"A two-dimensional numerical model of the high electron mobility transistor (HEMT) with consideration of quantization in the channel is presented. In this model, the spatial spread of the electron concentration in the quantum well normal to the heterojunction is taken into consideration by solving Schrodinger's and Poisson's equations self-consistently. The Boltzmann transport equation in the form of a current continuity equation and an energy transport equation is solved to obtain the transient transport behavior. Transport of carriers takes place in two layers in the GaAs region: the lowest subband of the quantum well and a non-quantized bulk layer; The simulation program investigates the effects on the overall performance of the device due to variation of the gate length and the impurity doping concentration in AlGaAs. A reduction in the gate length results in an increase of the drain current which is partly due to a shift in the threshold voltage. (Abstract shortened with permission of author.).","abstract_html":"A two-dimensional numerical model of the high electron mobility transistor (HEMT) with consideration of quantization in the channel is presented. In this model, the spatial spread of the electron concentration in the quantum well normal to the heterojunction is taken into consideration by solving Schrodinger's and Poisson's equations self-consistently. The Boltzmann transport equation in the form of a current continuity equation and an energy transport equation is solved to obtain the transient transport behavior. Transport of carriers takes place in two layers in the GaAs region: the lowest subband of the quantum well and a non-quantized bulk layer; The simulation program investigates the effects on the overall performance of the device due to variation of the gate length and the impurity doping concentration in AlGaAs. A reduction in the gate length results in an increase of the drain current which is partly due to a shift in the threshold voltage. (Abstract shortened with permission of author.).","abstract_has_math":false,"creators":["Ng, Sze-Him"],"institution":"University of Nevada, Las Vegas","degree_name":"Master of Science (MS)","degree_level":"Thesis","degree_discipline":"Electrical and Computer Engineering","degree_department":null,"school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":[],"year":1989,"date_issued":"1989-01-01T08:00:00Z","date_published":"1989-01-01T08:00:00Z","updated_at":"2026-07-24T05:23:59Z","subjects":[],"languages":["English"],"rights":["IN COPYRIGHT. For more information about this rights statement, please visit http://rightsstatements.org/vocab/InC/1.0/"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["https://oasis.library.unlv.edu/rtds/28"],"render_values":[{"text":"https://oasis.library.unlv.edu/rtds/28","href":"https://oasis.library.unlv.edu/rtds/28","code":true}]}]},"links":{"outbound_url":"https://doi.org/10.25669/r07q-alao","outbound_label":"DOI","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:creator","label":"Author","values":["Ng, Sze-Him"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:publisher","label":"Institution","values":["University of Nevada, Las Vegas"]},{"key":"dc:type","label":"Dc Type","values":["Text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical and Computer Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Thesis"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Master of Science (MS)"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["English"]},{"key":"dc:rights","label":"Dc Rights","values":["IN COPYRIGHT. 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The Boltzmann transport equation in the form of a current continuity equation and an energy transport equation is solved to obtain the transient transport behavior. Transport of carriers takes place in two layers in the GaAs region: the lowest subband of the quantum well and a non-quantized bulk layer; The simulation program investigates the effects on the overall performance of the device due to variation of the gate length and the impurity doping concentration in AlGaAs. A reduction in the gate length results in an increase of the drain current which is partly due to a shift in the threshold voltage. (Abstract shortened with permission of author.)."]},{"key":"dc:format","label":"Dc Format","values":["pdf"]},{"key":"dc:title","label":"Title","values":["A two-dimensional numerical model of the high electron mobility transistor"]}]}],"canonical_facts":{"dc:creator":["Ng, Sze-Him"],"dc:description.abstract":["A two-dimensional numerical model of the high electron mobility transistor (HEMT) with consideration of quantization in the channel is presented. In this model, the spatial spread of the electron concentration in the quantum well normal to the heterojunction is taken into consideration by solving Schrodinger's and Poisson's equations self-consistently. The Boltzmann transport equation in the form of a current continuity equation and an energy transport equation is solved to obtain the transient transport behavior. Transport of carriers takes place in two layers in the GaAs region: the lowest subband of the quantum well and a non-quantized bulk layer; The simulation program investigates the effects on the overall performance of the device due to variation of the gate length and the impurity doping concentration in AlGaAs. A reduction in the gate length results in an increase of the drain current which is partly due to a shift in the threshold voltage. (Abstract shortened with permission of author.)."],"dc:format":["pdf"],"dc:identifier":["10.25669/r07q-alao","https://oasis.library.unlv.edu/rtds/28","https://oasis.library.unlv.edu/context/rtds/article/1027/viewcontent/uc.pdf"],"dc:language":["English"],"dc:publisher":["University of Nevada, Las Vegas"],"dc:rights":["IN COPYRIGHT. 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